Research Progress of GaSb Single Crystal

Abstract

Abstract: In recent years, antimonide infrared technology has developed rapidly and has become one of the important development directions of semiconductor technology. Gallium antimonide (GaSb), as a typical Ⅲ-Ⅴ compound semiconductor, has become a key substrate material for antimonide infrared optoelectronics due to its excellent properties. The demand for GaSb wafers is increasing, and higher requirements are also put forward with the maturing and application of antimonide infrared technology. The properties of epitaxial materials and devices are directly affected by substrate quality, so that GaSb substrates are required to have the characteristics of large size, lower defect density, better surface quality and consistency. The properties, growth methods, research progress at home and abroad, as well as applications of GaSb crystal are reviewed in this paper, and the development prospects are also analyzed.

Key words: GaSb, compound semiconductor, antimonide, crystal, infrared optoelectronics

CLC Number:

O471

LIU Jingming, YANG Jun, ZHAO Youwen, YANG Cheng'ao, JIANG Dongwei, NIU Zhichuan. Research Progress of GaSb Single Crystal[J]. Journal of Synthetic Crystals, 2024, 53(1): 1-11.

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