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    15 January 2024, Volume 53 Issue 1
    Reviews
    Research Progress of GaSb Single Crystal
    LIU Jingming, YANG Jun, ZHAO Youwen, YANG Cheng'ao, JIANG Dongwei, NIU Zhichuan
    2024, 53(1):  1-11. 
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    In recent years, antimonide infrared technology has developed rapidly and has become one of the important development directions of semiconductor technology. Gallium antimonide (GaSb), as a typical Ⅲ-Ⅴ compound semiconductor, has become a key substrate material for antimonide infrared optoelectronics due to its excellent properties. The demand for GaSb wafers is increasing, and higher requirements are also put forward with the maturing and application of antimonide infrared technology. The properties of epitaxial materials and devices are directly affected by substrate quality, so that GaSb substrates are required to have the characteristics of large size, lower defect density, better surface quality and consistency. The properties, growth methods, research progress at home and abroad, as well as applications of GaSb crystal are reviewed in this paper, and the development prospects are also analyzed.
    Research Progress and Prospect of CZTS-Based Single Crystal Materials
    FU Wenfeng, ZHU Xupeng, LIAO Jun, RU Qiang, XUE Shuwen, ZHANG Jun
    2024, 53(1):  12-24. 
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    2-Ⅱ-Ⅳ-Ⅵ4 type semiconductor copper-zinc-tin-sulfur (CZTS) has outstanding advantages in terms of cost, constituent element abundance, toxicity and stability, and is considered as a promising solar energy harvesting material for green and cost-effective photovoltaic applications. Cu2ZnSn(S,Se)4 possesses chalcopyrite-like crystal structure and photoelectric performance. Nevertheless, the champion efficiency is still far behind its counterpart Cu(In,Ga)Se2(23.5%). The current research in this field focus on the optoelectronic properties of polycrystalline thin film materials and devices, leads to unclear identification of defect states and regulation of energy bands, which has become a bottleneck for breakthroughs in the performance of CZTS-based optoelectronic devices. This article reviews the research progress of CZTS-based single crystal materials, introduces its crystal structure and physical properties in detail, and summarizes the preparation technology of high-quality single crystal by travelling heater method, iodine transport method and flux method. The research on multi-type nanocrystal library and the physical properties of natural kesterite are also introduced. The optical and electrical properties of the prepared CZTS-based single crystal materials are discussed. Finally, the article summarizes the application of CZTS-based single crystal materials in semiconductor devices, points out the existing problems, and provides possible development directions for improving the performance of Ⅰ2-Ⅱ-Ⅳ-Ⅵ4 semiconductor material devices.
    Research Progress on the Preparation and Application of GaAsBi Semiconductor Materials
    MA Yulin, GUO Xiang, DING Zhao
    2024, 53(1):  25-37. 
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    Rare bismuth III-V semiconductor materials have broad prospects in the field of electronic and optoelectronic devices. The preparation methods mainly include molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE). This article focuses on GaAsxBi1-x semiconductor materials which show physical characteristics of large bandgap reduction, temperature insensitivity, strong spin-orbit splitting, and provides a review of their preparation methods and research progress. Researches on GaAsBi materials are mainly on the preparation of thin films, multiple quantum wells, nanowires, and quantum dots materials. In the aspect of thin films materials, the emphasis is on studying the influence of preparation process conditions on GaAsBi thin films, such as low substrate temperature, low growth rate, and unconventional V/III flux ratios; for multiple quantum wells materials, the use of dual substrate temperature techniques can effectively reduce Bi segregation; for nanowires and quantum dots materials, metallic Bi, as a surface-active agent, can improve the morphology and optical properties of the materials. However, there are still challenges in the research and application of this material, such as the degradation of crystalline quality in thin films materials, the problem of metallic Bi agglomeration, and controversies regarding the uniformity and formation mechanism of Bi in quantum dots materials. Addressing these issues is of great significance for improving the quality of GaAsxBi1-x semiconductor materials and promoting device development.
    Interface Defects of Perovskite Solar Cells and Their Suppression Methods
    LI Hong, LIAO Xin, HOU Jing, XU Zhong
    2024, 53(1):  38-50. 
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    At present, most high-efficiency organic-inorganic halide perovskite (OIHP) solar cells are made of polycrystalline perovskite films, and the surface or grain boundaries of these polycrystalline films often contain a large number of defects. The defects in the OIHP film will lead to non-radiative recombination of photogenerated carriers and induce the decomposition of the OIHP material, resulting in a decrease in the power conversion efficiency (PCE) and stability of the device. In this review, the types of defects in perovskite solar cells and the effects of defects on the performance of perovskite solar cells (PSCs) were analyzed. The progress of passivation of interface defects between electrode and charge transport layer or between charge transport layer and perovskite layer to obtain higher efficiency and stability of perovskite solar cells is introduced in detail. The design ideas of passivation molecules and the challenges facing the commercial application of perovskite photovoltaics are prospected.
    Research Progress on Rare Earth Up-Conversion Photocatalysts
    WANG Zhaopeng, ZENG Jin, GAO Yan, WANG Chunying
    2024, 53(1):  51-57. 
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    The up-conversion (UC) luminescent properties of rare earth broaden the development of photocatalsyts. Rare earth elements and up-conversion agents all could promote the photocatalytic activity and research value by broadening the light response from infrared to violet irradiation in the field of photocatalytic technology. This paper reviewed the research progress of the rare earth up-conversion luminescent photocatalysts. Er, Yb, Tm, Ho and Tb are the main elements which have properties of up-conversion luminescence, of which Yb is usually taken as the sensitizing agent while Er is the most widely studied because of its efficient and green luminescent properties. According to their different structures, rare earth up-conversion agents are classified into three categories: rare earth fluoride, rare earth oxyhalide, and rare earth oxides or composite oxides. NaYF4 was studied widely because of its outstanding properties. Although the excellent properties of rare earth UC materials, there still exists some drawbacks, especially the low quantum efficiency of UC materials, which greatly limits the photocatalytic activities. Therefore, the rare earth UC photocatalysts need further construction and research. This paper intends to provide some inspiration and help for the researches in the area of full spectrum photocatlaysts.
    Research Articles
    Effect of Granularity of Raw Materials on Growth of AlN Crystal
    YU Ruixian, WANG Guodong, WANG Shouzhi, CAO Wenhao, HU Xiaobo, XU Xiangang, ZHANG Lei
    2024, 53(1):  58-64. 
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    Aluminum nitride (AlN) powder was sintered to prepare polycrystalline particle materials for the growth of AlN crystal. It was found that the polycrystalline particle materials have significantly reduced impurities compared to the raw materials. The influence of different raw material porosity on crystal growth was simulated by numerical simulation software, and the distribution of temperature field inside the raw materials under the same crystal growth conditions was also analyzed. AlN crystal growth was carried out using raw materials with different granularity, and the most suitable temperature gradient and granularity of raw materials were obtained. Finally, AlN crystals with a diameter of 1 inch and a thickness of 15 mm were successfully grown using polycrystalline particles with particle sizes of 1~3 mm. 1 inch AlN wafer was obtained by cutting, grinding and polishing of the grown AlN crystals. The wafer was characterized by high-resolution X-ray diffraction (HRXRD) and Raman spectroscopy. The results show that the full width at half maximum (FWHM) of the HRXRD rocking curve is 154.66″, the peak position and FWHM of E2(high) phonon mode are 656.7 and 4.3 cm -1, respectively, indicating that the grown AlN has good crystallization quality.
    Band Gap Characteristics and Experimental Study of Local Resonance Sandwich Metastructure Beam
    FU Qiang, YAO Fei, ZHANG Hongyan
    2024, 53(1):  65-72. 
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    A new type of local resonance sandwich metastructure beam is proposed in this paper. The structure consists of the corrugated sandwich beam matrix and local resonance units which is composed of mass blocks wrapped by soft materials. The band gap distribution and vibration transmission characteristics of the structure are calculated by transfer matrix method and finite element method respectively. The vibration transmission test platform of the sandwich metastructure beam was built, and the test data were obtained and compared with the calculation results. Finally, the regulation strategy of the structural parameters on the band gap characteristics of the structure was studied. The results show that: there are two flexure wave band gaps in the low frequency range, and the band gap frequencies are 196.1~339.0 Hz and 377.2~655.6 Hz, respectively; a full band gap is shown in the flexure wave band gaps, and the frequency range is 380.0~423.6 Hz. Within these two band gap ranges, significant suppression of flexure vibration transmission occurs. The structural parameters of corrugated sandwich beams have great influence on the characteristics of the band gaps. The low frequency and high bandwidth vibration reduction requirements of the local resonance sandwich metastructure beam can be realized by selecting proper structural parameters.
    Fabrication and Characteristics of p-Si/n-Ga2O3 Heterojunction
    CHEN Peiran, JIAO Teng, CHEN Wei, DANG Xinming, DIAO Zhaoti, LI Zhengda, HAN Yu, YU Han, DONG Xin
    2024, 53(1):  73-81. 
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    PN junction with p-Si/n-Ga2O3 structure was developed by metal organic chemical vapor deposition (MOCVD) technology on p-type Si (111) substrate. The crystal structure, surface morphology and surface roughness were measured by X-ray diffractometer and atomic force microscope. Then Ti/Au electrodes on these samples were developed by magnet sputtering and evaporation for testing the PN junction characteristics such as I-V curve chart, threshold voltage, on-off current ratio, reverse saturation current, ideal factor, and the barrier height at zero bias voltage. The regulation of PN junction characteristics with growing parameters such as doping concentration and film thickness was studied, and the reasons were given. The crystal quality of β-Ga2O3 thin film and the characteristics of the devices were improved by two-step growing method. A set of PN junction samples were fabricated at three different temperatures when the buffer was developed. Finally, the best conditions of fabricating the PN junction devices was found, and the lattice mismatch and thermal mismatch between Si substrate and β-Ga2O3 thin film were reduced. A high quality n-type β-Ga2O3 thin film with surface roughness of 4.21 nm and a PN junction with low ideal factor of 42.1 was obtained.
    Effect of Annealing Temperature on Electrical Properties of BCZT Epitaxial Films and Its Conductivity Mechanism
    PENG Qianwen, JI Xiang
    2024, 53(1):  82-89. 
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    The pulsed laser deposition (PLD) technique for the preparation of Ba0.85Ca0.15Zr0.1Ti0.9O3(BCZT) epitaxial films usually requires high deposition temperature and is prone to contain oxygen vacancy defects. In order to provide a post-annealing treatment process based on PLD, high-quality BCZT epitaxial films were successfully prepared on conductive substrates, and the effects of annealing temperature on the structure and properties of BCZT epitaxial films were investigated. The films annealed at different temperatures of 750, 800, 850 and 900 ℃ show pure phases. The ferroelectric properties of the films are gradually improved as the annealing temperature increase, with 2Pr increasing from 4.2 to 17.6 μC/cm2. However, the sample at the annealing temperature of 900 ℃ has the most serious leakage current problem. By fitting the J-E relationship, it is found that the films annealed from 700 ℃ to 850 ℃ follow the Ohmic conduction mechanism at low fields, while the samples annealed at 900 ℃ follow the space charge limited current mechanism, and all the films follow the Fowler-Nordheim tunneling mechanism at high fields.
    Molten Salt Synthesis of Color Tunable NaCa2Mg2(VO4)3∶Eu3+ Phosphors and Their Luminescent Properties
    CHEN Jinrun, CHEN Mengyu, LI Zixuan, LI Wei, CHU Chu, CAO Xiuzhe, ZHAI Yongqing
    2024, 53(1):  90-96. 
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    A series of color tunable NaCa2-xMg2(VO4)3xEu3+(0≤x≤0.10) phosphors were synthesized by molten salt method using cheap NaCl as molten salt. The effects of synthesis conditions and Eu3+doping on the structure and luminescence properties of the samples were investigated in details. The results show that the optimum reaction conditions for the synthesis of NaCa2Mg2(VO4)3 are reaction temperature of 800 ℃, reaction time of 0.5 h and mass ratio of raw material to molten salt of 1∶3. The obtained samples are NaCa2Mg2(VO4)3 pure phase with higher crystallinity. The micromorphology of the samples changed from coral-like to smooth irregular polyhedron with the increase of temperature. Eu3+ doping has little effect on the crystal structure of NaCa2Mg2(VO4)3, but great effect on its luminescence properties. With the increase of Eu3+ concentration (x), the characteristic emission band intensity of VO3-4 gradually decreases, while the characteristic emission peak intensity of Eu3+ first increases and then decreases, reaching the maximum when x=0.06. Therefore, the luminous color of the samples can be modulated by changing the Eu3+ concentration, from green to yellow-green, yellow, yellow-white and orange-red. According to the fluorescence spectrum and fluorescence lifetime analysis, it is confirmed that the energy transfer process of VO3-4 to Eu3+ exists in NaCa2Mg2(VO4)3∶Eu3+ phosphors, and the energy transfer efficiency is about 23%. The thermal stability analysis shows that when the temperature increases from room temperature (298.15 K) to 398.15 K, the retaining ratio of the main emission peak intensity of NaCa2Mg1.94(VO4)3∶0.06Eu3+ phosphor at 614 nm is 68.4%, showing its good thermal stability.
    Luminescence Performance of Alkaline Metal Ion Co-Doped Sr3Ga2Ge4O14∶Dy3+
    BAI Xin, YANG Weibin, XIONG Feibing, LI Mingming, HU Zhengkai, GUO Yisheng, FU Xingyu
    2024, 53(1):  97-106. 
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    In this paper, a series of novel Sr3-xGa2Ge4O14xDy3+ (x=0~0.40) (mole fraction) and Sr2.68Ga2Ge4O14∶0.16Dy3+, 0.16M+ (M=Li, Na, K) phosphors were prepared by high-temperature solid-phase method. EDS analysis confirms the presence of Sr, Ga, Ge, O and Dy elements in the phosphors. The series Sr3-xGa2Ge4O14xDy3+ produce strong yellow light emission with 568 nm as the dominant wavelength under 350 nm optical excitation, corresponding to the 4F9/26H13/2 transition. The emission spectra of the phosphor show that the emission intensity varies with the increase of Dy3+ concentration and reaches its maximum at x=0.16. The co-doping of alkali metal M(M=Li, Na, K) as a charge compensation ion, among which Li+ has the most obvious effect on increasing the emission intensity of Dy3+, led to the increase of the emission intensity of the phosphor to twice that of the phosphor in the absence of the charge compensation ion. In addition, the fluorescence lifetime of the phosphor decrease continuously with the increase of Dy3+ doping concentration. Finally, the CIE chromaticity coordinates and thermal stability of the phosphor Sr2.68Ga2Ge4O14∶0.16Dy3+, 0.16Li+ are explored, and its CIE chromaticity coordinates are (0.371 9,0.404 6), which are located in the yellow region, and its luminescence intensity at 453 K is about 95.5% of its room temperature luminescence intensity. Therefore, Dy3+, Li+ co-doped Sr3-xGa2Ge4O14 phosphor is a potential candidate material for display devices and white light LED devices.
    Preparation and Luminescent Properties of GdPO4∶Tb3+ Phosphors
    MENG Xiaoyan, LIAO Yun, ZHANG Lirong, ZHANG Yumeng, WU Lidan, YANG Liusai
    2024, 53(1):  107-114. 
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    Rare earth Tb3+ doped gadolinium phosphate (GdPO4) green phosphor is a potential phosphor for white LED, while the preparation by conventional hydrothermal method has some problems, such as long reaction time and low doping amount of Tb3+. A series of Gd1-xPO4xTb3+ (x=0, 1%, 5%, 11%, 13%, 15%, 17%, 19%) samples were prepared by hydrothermal method combined with high temperature sintering. The phase structure, morphology, elemental composition, optical absorption and luminescence properties of samples were characterized by X-ray diffractometer (XRD), scanning electron microscope (SEM)-energy spectrometer (EDS), infrared spectrometer (FT-IR) and fluorescence spectrophotometer. The results show that, all the synthesized samples are pure phase of GdPO4 belonging to monoclinic monazite structure, and the Tb3+ are uniformly distributed in GdPO4 matrix and cause lattice shrinkage. Under 274 nm photoexcitation, GdPO4∶Tb3+ phosphors have the strongest emission peak at 545 nm, which belongs to 5D47F5 transition of Tb3+. The fluorescence quenching concentration of Tb3+ was determined to be 15% (molar ratio), and this sample (GdPO4∶15%Tb3+) exhibits excellent green light emission and good thermal stability.
    Up-Conversion Photoluminescence and Optical Thermometry Properties of Novel Silicate K3(Y0.88Yb0.10Ho0.02)Si2O7 Phosphor
    TENG Yuhan, WANG Jiantong, GONG Changshuai, WANG Bowen, XUE Xuyan, WANG Xuejiao
    2024, 53(1):  115-122. 
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    In this work, a new type of silicate K3(Y0.88Yb0.10Ho0.02)Si2O7 phosphor was synthesized by solid state method. The up-conversion photoluminescence and optical thermometry properties of samples were systematically studied. The results show that K3(Y0.88Yb0.10Ho0.02)Si2O7 phosphor exhibits red emission under 980 nm excitation. The main emission peak is located at 665 nm, which is attributed to the 5F55I8 transition of Ho3+. The up-conversion mechanism of the phosphor and the photon reaction which may lead to up-conversion were studied by logarithmic transformation of the luminescence intensity and excitation power. It is proved that the up-conversion luminescence process for the (5S4,5F2)→5I8 transition is a three-photon mechanism, and the 5F55I8 transition is a two-photon mechanism. The fluorescence intensity ratio of the 5F5/(5F4,5S2) non-thermal coupling energy level of K3(Y0.88Yb0.10Ho0.02)Si2O7 phosphor shows its good optical thermometry potential, and the maximum sensitivity is calculated to be about 0.17 K-1 (423 K).
    First-Principles Study on the Electronic Structure and Optical Properties of A3PO4(A=Li, Na, K, Rb, Cs)
    WANG Yunjie, WEN Dulin, SU Xin
    2024, 53(1):  123-131. 
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    A systematic exploration was conducted on the geometrical structures, electronic structures and optical properties of a series of compounds A3PO4 (A=Li, Na, K, Rb, Cs), made up of P-O coordinated polyhedra with different cations, based on density functional theory. The results show that by changing the substitution of alkali metal atoms, the structural framework can be manipulated, thereby modulating its band gap and optical properties, providing an effective approach for designing materials with excellent comprehensive performance. In investigating the relationship between the geometric structures and band gap properties of these compounds, the calculations of band structure indicates that all five compounds show direct bandgap structure and have wide band gaps of 5.853, 5.153, 4.083, 3.559 and 3.405 eV for A=Li, Na, K, Rb, Cs, respectively. Analysis of the atomic populations indicate that A(A=Li, Na, K, Rb) cation bind with oxygen to form O—A bond exhibiting ionic characteristics. This bonding behavior likely contributes to the gradual decrease in the band gap of A3PO4 compounds as the cation atomic number increases. On the other hand, Cs3PO4 doesn't form an O—Cs bond with an ionic character, thus leading to a reduction in the band gap. The conduction band of these five compounds is composed of the s and p orbitals of alkali metal atoms as well as the P-3p orbital. The main contributor to the top of the valence band is the O-2p orbital, and the O-2p orbital of O atom also shows strong localization near the Fermi level. The P-3p orbitals bond with the 2p orbitals of O, showing a strong covalent bond of P—O. All five compounds have weak responses to low-energy electromagnetic waves, mainly concentrated in the high-energy region of 5~15 eV.
    Study on Boron-Doped Amorphous Silicon Back-Junction of High Efficiency Heterojunction Solar Cells
    SU Shichao, ZHAO Xiaoxia, TIAN Hongbo, WANG Wei, ZONG Jun
    2024, 53(1):  132-137. 
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    The crystalline silicon/amorphous silicon heterojunction (HJT) solar cells have attracted much attention due to their advantages of high open-circuit voltage, high conversion efficiency and low temperature coefficient. As the emitters of cell, boron-doped p-type amorphous silicon (p-a-Si∶H) thin films play an important role in achieving high conversion efficiency. By changing the boron doping concentration, the electrical properties of the p-layer can be adjusted, and therefore the conversion efficiencies of solar cells are directly affected. In this article, plasma enhanced chemical vapor deposition (PECVD) device was used to deposite amorphous silicon thin films applied in the crystalline silicon/amorphous silicon HJT solar cells. By changing the doping concentration of B2H6, p-a-Si∶H layer in the cells was optimized. As a result, the relative efficiency of HJT cell was improved by 0.75%. Further, gradient doped double-layer emitter structure was adopted. An improvement of 400 μs and 3 mV could be achieved for the minority carrier lifetime (@Δn=5×1015 cm-3) and implied Voc (@1-Sun) respectively. Eventually benefiting from an obvious boost in FF and Voc, the efficiency of the solar cells was increased by 2.03% relatively and an optimized p-type emitter process was therefore established.
    Process Study on Selective Emitter of TOPCon Solar Cells
    YANG Lu, SONG Zhicheng, NI Yufeng, ZHANG Ting, WEI Kaifeng, RUAN Miao, SHI Huijun, ZHENG Leijie
    2024, 53(1):  138-144. 
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    In order to improve the photoelectric conversion efficiency of tunnel oxide passivated contact (TOPCon) solar cells, the selective emitter structure was prepared by boron diffusion and laser doping. The effects of sheet resistance of boron diffusion, power output ratio of laser and oxidation time on the passivation of the emitter were studied. The experimental results show that when the sheet resistance is 140 Ω/□, the oxidation temperature is 1 020 ℃, and the oxidation time is 30 min, the sheet resistance of light doping region (p+) reaches 320 Ω/□, the corresponding implied open circuit voltage reaches 729 mV, and the dark saturation current density is 12 fA/cm2. The sheet resistance of heavily doping region (p++) reaches 113 Ω/□, the corresponding implied open circuit voltage reaches 710 mV, and the dark saturation current density is 26 fA/cm2. Based on the selective emitter process, the highest conversion efficiency of 24.75% was obtained with an open circuit voltage of 720 mV, and a short-circuit current improvement of 30 mA, leading to an absolute efficiency gain of 0.26 percent point for the champion conversion efficiency.
    Synthesis and Performance of Cu Doping P2-Type Na0.67Ni0.33Mn0.67O2 Used as Cathode Material for Sodium Ion Batteries
    LIU Hui, YAN Gongqin, LAN Chunbo, ZHANG Ziyang
    2024, 53(1):  145-153. 
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    A series of Cu-doped layered P2-type Na0.67Ni0.33-xCuxMn0.67O2 (x=0, 0.05, 0.10, 0.15, 0.20, 0.25) with regular morphology and smooth surface were synthisized by sol-gel method. The morphology, structure and composition of those materials were characterized using SEM, XRD, EDS and XPS technologies, and their electrochemical properties were investigated by cyclic voltammetry and constant current charge-discharge methods through using them as cathode materials for sodium ion batteries. The optimum doping ratio was obtained. It is found that doping did not change the layered structure and morphology of the materials. Those materials exhibit good cycling stability and multiplicative performance due to the introduction of highly electrochemically active Cu2+ as a substituent and the increase of the surface active sodium storage sites. In the voltage range of 2.0 V to 4.3 V and a multiplicity of 0.1 C, the initial discharge specific capacity of Na0.67Ni0.18Cu0.15Mn0.67O2 (with Cu doped ratio of 0.15) has an initial discharge specific capacity of 126.74 mAh/g and a capacity retention rate of 79.10% after 100 cycles, which is 50.92% higher than that of the undoped material. The enhanced electrochemical properties of the material are attributed to the insertion of Cu2+ into the transition metal layer, and the radius of Cu2+ (0.73 ) is larger than that of Ni2+ (0.69 ), which widens the transition metal layer spacing and provides channels for Na+ diffusion, and in turn increases the Na+ diffusion rate. When charged to high voltage, the Na+ vacancy generation during Na+ de/embedding process is inhibited, thus the crystal structure of the material is stabilized, the P2-O2 phase transition is suppressed, and the cycling stability is improved.
    Properties of ZnNb2O6 Doped BNT-Based Lead-Free Relaxor Ferroelectric Ceramics
    XIAO Qilong, WANG Shiyu, JIANG Rui, MEI Xiongfeng, WU Hao, SHI Yajuan, SUN Shuai, WU Wenjuan
    2024, 53(1):  154-162. 
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    In this paper, 0.7(Na0.5Bi0.5)TiO3-0.3(Sr0.7Bi0.2)TiO3-xZnNb2O6 (abbreviated as BNT-SBT-xZN, where x=0.5%, 1.0%, 1.5% and 2.0%, molar fraction) ceramics were prepared by the solid-state reaction method. The effect of ZnNb2O6 doping on the structure and properties of BNT-based ceramic materials was studied. The results show that, BNT-SBT-xZN ceramics doped with a small amount of ZnNb2O6 (x=0.5%) have pure perovskite structure with compact microstructure and no second phase. At room temperature, they are typical relaxor ferroelectrics (dispersion index γ>1.7). For all unpoled and poled BNT-SBT-xZN ceramics of x=0.5%, the transition temperature of ferroelectric-relaxation (TR-E) is lower than room temperature, while TR-E is below 100 ℃, which denotes the dielectric anomalous associated with thermal relaxation of polar nano regions (PNRs) in rhombohedral (R3c) and tetragonal (P4bm) symmetrical structure. When the content of ZnNb2O6 increases, the ergodic relaxor state gradually plays a dominant role, maximum polarization (Pmax) and remanent polarization (Pr) both show a decreasing trend. BNT-SBT-xZN ceramics with x=0.5% have high Pmax, low Pr and large ΔP, resulting in excellent energy storage characteristics and frequency and temperature stability with Pmax of 44.7 μC/cm2, Pr of 12.4 μC/cm2, ΔP of 32.3 μC/cm2, energy density (W1)of 1.066 J/cm3, energy storage efficiency (η) of 48.68% under 110 kV/cm. Moreover, discharge energy density Wd, maximum discharge current Imax, current density CD and power density PD of 0.60 J/cm3, 45.33 A, 1 443 A/cm2 and 72.2 MW/cm3 are obtained at room temperature and 100 kV/cm, respectively.
    Enhancing the Electrical Conductivity and Anisotropy of CuCrO2 Ceramics by Mg2+ Doping
    MENG Jiayuan, LI Yi, ZHAO Yuchun, WU Haorong, WANG Xuesong, LUO Wanjun, YU Lan
    2024, 53(1):  163-169. 
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    CuCr1-xMgxO2(x=0, 0.005, 0.010, 0.020, 0.030, 0.040, 0.050) polycrystals with c-axis preferred orientation were prepared by solid phase reaction method. The effects of Mg2+ doping on the microstructure orientation, electrical properties, and anisotropy of CuCrO2 polycrystals from the vertical and parallel macroscopic in-plane and thickness directions were investigated. The mechanism of Mg doping enhancing the anisotropy of the electrical conductivity in CuCrO2 ceramics was explored. When x≤0.030, the polycrystals exhibit a rhombohedral R3m single-phase structure, with grain growth predominantly occurring within the surface plane. This led to a reduction in the presence of gas pores and grain boundaries, resulting in the increase of density. The polycrystals demonstrated thermally activated semiconductor electrical transport behavior. When x=0.030, the in-plane orientation factor F(00l) reaches its highest value of 0.912, indicating a significantly enhanced c-axis preferred orientation within the surface plane compared to the thickness direction. The room temperature resistivity of CuCr1-xMgxO2 polycrystals in the in-plane and thickness directions decrease significantly to 1.80×10-3 and 3.16×10-3 Ω·m, respectively. This difference in electrical performance between the two directions was closely related to the structural anisotropy. The thermal activation energy decreased to 0.03 eV, and the c-axis preferred orientation has no significant influence on the thermal activation energy. The maximum carrier concentration increase by three orders of magnitude compared to the parent phase, indicating fewer grain boundary defects, an increased average free path, enhanced transport capacity, and higher conductivity. The experimental results reveal that the optimal doping concentration is x=0.030. When the doping level exceeded 0.030, the spinel phase MgCr2O4 appeared as an impurity, resulting in a deterioration of the microstructure and electrical transport properties of the samples.
    Photocatalytic Degradation of Dying Wastewater by Porous Ceramics Supported Ce-TiO2
    CHEN Weijie, HUA Kaihui, LEI Ming, WANG Wanglong
    2024, 53(1):  170-180. 
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    In this paper, mullite porous ceramics were prepared by dry compression molding method using construction waste as main raw material, alumina as aluminum source, aluminum fluoride as whisker catalyst, boron oxide, cerium oxide and molybdenum trioxide as sintering aids, and corn starch as pore forming additive. The effects of cerium oxide and molybdenum trioxide contents on the structure and physicochemical properties of the mullite porous ceramics were investigated, and the ceramics with the best performance were loaded with TiO2/Ce-TiO2 for photocatalytic degradation of simulated printing and dyeing wastewater. The results show that, in terms of mass fraction, when the content of cerium oxide is 4% and the content of molybdenum trioxide is 1%, the flexural strength of porous ceramics is 8.69 MPa, and the open porosity is 64.25%. Loading with 0.05 g Ce-TiO2 and mixing with 1.2 mmol/L PMS, the degradation rate of the methylene blue solution reaches 96.62% after 120 min of irradiation with LED visible light at power of 18 W and wavelength of 420~430 nm.