欢迎访问《人工晶体学报》官方网站,今天是 2025年8月13日 星期三 分享到:

人工晶体学报 ›› 2025, Vol. 54 ›› Issue (3): 420-425.DOI: 10.16553/j.cnki.issn1000-985x.2024.0300

• 薄膜外延 • 上一篇    下一篇

c面蓝宝石衬底上ε-Ga2O3的金属有机物化学气相沉积

王子铭, 张雅超, 冯倩, 刘仕腾, 刘雨虹, 王垚, 王龙, 张进成, 郝跃   

  1. 西安电子科技大学集成电路学部,西安 710000
  • 收稿日期:2024-11-28 出版日期:2025-03-15 发布日期:2025-04-03
  • 通信作者: 张雅超,博士,教授。E-mail:ychzhang@xidian.edu.cn; 张雅超,教授,工学博士,硕/博士生导师,国家级青年人才。分别于2012年和2017年获得西安电子科技大学工学学士和工学博士学位。2017年加入西安电子科技大学微电子学院郝跃院士团队工作,主要从事新型宽禁带、超宽禁带半导体射频与功率电子器件研究。近年来,在微电子领域一流期刊发表高水平论文110余篇,以第一负责人身份主持国家重大专项、国家重点研发计划课题、国家自然科学基金面上项目、国家自然科学基金青年项目、省重点研发技术、省重点产业链项目子课题等,获中国电子学会技术发明一等奖、陕西省电子学会自然科学一等奖,获国家“科技委青年人才托举计划”“博士后创新人才支持计划”资助,获授权发明专利20余项。
  • 作者简介:王子铭(1999—),男,辽宁省人,硕士研究生。E-mail:2275362016@qq.com

ε-Ga2O3 Growth on c-Plane Sapphire Substrate with Metal-Organic Chemical Vapor Deposition

WANG Ziming, ZHANG Yachao, FENG Qian, LIU Shiteng, LIU Yuhong, WANG Yao, WANG Long, ZHANG Jincheng, HAO Yue   

  1. Division of Integrated Circuits, Xidian University, Xi'an 710000, China
  • Received:2024-11-28 Online:2025-03-15 Published:2025-04-03

摘要: 本文采用金属有机物化学气相沉积(MOCVD)法在c面蓝宝石衬底上沉积ε-Ga2O3薄膜,研究了单步生长和两步生长方法对薄膜沉积的影响。采用单步法时,薄膜直接在蓝宝石衬底上生长,使用高分辨X射线单晶衍射分析沿蓝宝石c轴方向的Ga2O3物相构成,在生长温度从360 ℃变化至425 ℃均能观察到β-Ga2O3(402)峰,而在370~410 ℃还能观察到ε-Ga2O3(004)峰。其中,380和390 ℃时的样品具有更强的ε-Ga2O3(004)峰和更低的半峰全宽,以及更低的表面粗糙度。两步生长法为以380 ℃生长的ε-Ga2O3薄膜作为缓冲层,而后在400~430 ℃继续生长ε-Ga2O3薄膜,观察到ε-Ga2O3(004)峰强度均高于单步生长法且半峰全宽均更低,在430 ℃时薄膜的(004)峰摇摆曲线半峰全宽达到0.49°。进一步改变单步生长法的压强,明确缓冲层有效促进ε-Ga2O3沿c轴生长。

关键词: ε-Ga2O3, 金属有机物化学气相沉积, 蓝宝石衬底, 晶体生长, 宽禁带半导体, X射线衍射, 原子力显微镜

Abstract: In this paper, the growths of ε-Ga2O3 thin films on c-plane sapphire substrate by metal-organic chemical vapor deposition (MOCVD) via single-step and two-step growth methods were studied respectively. High-resolution X-ray single crystal diffraction was used to analyze the phase composition of Ga2O3 along the c-axis direction of the sapphire. In the single-step method, the thin film grows directly on the sapphire substrate. The β-Ga2O3 (402) peak can be observed at growth temperatures ranging from 360 ℃ to 425 ℃, while the ε-Ga2O3 (004) peak can also be detected at 370~410 ℃. Samples grown at 380 and 390 ℃ exhibit stronger ε-Ga2O3 (004) peaks with lower full width at half maximum (FWHM) and a surface roughness. The two-step growth method involves using an ε-Ga2O3 thin film grown at 380 ℃ as a buffer layer, followed by continuing the growth of ε-Ga2O3 thin films at 400~430 ℃. It is observed that the intensity of the ε-Ga2O3 (004) peak is higher than that of the single-step growth method, with even lower FWHM values. The rocking curve FWHM of the (004) peak of the film reaches 0.49° at continuing growth temperature of 430 ℃. Further adjustment of the pressure in the single-step growth method confirms that the buffer layer effectively promotes the growth of ε-Ga2O3 along the c-axis.

Key words: ε-Ga2O3, metal-organic chemical vapor deposition, sapphire substrate, crystal growth, wide-band-gap semiconductor, X-ray diffraction, atomic force microscope

中图分类号: