高迁移率的硼掺杂单晶金刚石微波等离子体化学气相沉积生长及电学性质研究

doi:10.16553/j.cnki.issn1000-985x.2025.0060

摘要/Abstract

摘要： 高结晶质量、高迁移率的硼掺杂单晶金刚石薄膜是实现高耐压高功率电子器件的关键。本研究采用微波等离子体化学气相沉积（MPCVD）技术，结合两步生长法与低温氧气辅助生长策略，成功制备了高迁移率的硼掺杂单晶金刚石，并实现了其电学性能的广泛调控。所生长薄膜的X射线衍射峰半峰全宽（FWHM）小于60″，空穴浓度可在10¹⁴~10¹⁷ cm^-3调控，最大室温空穴迁移率超过1 400 cm²/（V·s），达到国际先进水平。此外，本文结合输运性质测试和高分辨X射线光电子能谱（XPS）测试研究了所生长掺硼单晶金刚石样品的电子结构，指出了高晶体质量是获得高迁移率的重要原因，研究结果为高迁移率硼掺杂单晶金刚石的生长和器件应用提供了理论参考。

关键词: 单晶金刚石; 外延生长; 硼掺杂; MPCVD; 电学性质; 迁移率; 功率器件

Abstract: High-crystallinity and high-mobility boron-doped single crystal diamond films are the key to realizing high-voltage and high-power electronic devices. In this study， microwave plasma chemical vapor deposition （MPCVD） technology was employed， combined with a two-step growth method and a low-temperature oxygen-assisted growth strategy， to successfully prepare high-mobility boron-doped single crystal diamond films with extensive electrical property tuning. The films were characterized using X-ray diffraction （XRD）， Hall effect measurements， and X-ray photoelectron spectroscopy （XPS）. XRD analysis reveals an XRD peak full width at half maximum （FWHM） of less than 60″， indicating excellent crystalline quality. Hall effect measurements demonstrats precise control over hole concentrations ranging from 10¹⁴ to 10¹⁷ cm^-3， with a maximum room-temperature hole mobility exceeding 1 400 cm²/（V·s）， reaching the international advanced level. XPS characterization confirms successful boron incorporation and reveals a direct correlation between crystalline perfection and high carrier mobility， identifying high crystalline quality as a key factor for achieving high mobility. This work establishes a robust technological framework for synthesizing high-quality boron-doped diamond films， providing key materials for the development of high-performance diamond devices.

Key words: single crystal diamond; epitaxial growth; boron doping; MPCVD; electrical property; mobility; power device

中图分类号:

O782

胡愈硕, 杨国健, 曹光宇, 刘赐恩, 张星, 龙浩, 徐翔宇, 张洪良. 高迁移率的硼掺杂单晶金刚石微波等离子体化学气相沉积生长及电学性质研究[J]. 人工晶体学报, 2025, 54(9): 1566-1573.

HU Yushuo, YANG Guojian, CAO Guangyu, LIU Cien, ZHANG Xing, LONG Hao, XU Xiangyu, ZHANG Hongliang. Growth and Electrical Properties of High-Mobility Boron-Doped Single Crystal Diamond via Microwave Plasma Chemical Vapor Deposition[J]. Journal of Synthetic Crystals, 2025, 54(9): 1566-1573.

图/表 6

图1 两步生长法示意图

Fig.1 Schematic diagram of two-step growth

表1 硼掺单晶金刚石样品基本参数

Table 1 Basic parameters of boron-doped single crystal diamond samples

Sample	1#	2#	3#	4#
B/C ratio/ppm	10	50	100	400
Size/mm³	6 $×$ 6 $×$ 0.035	6 $×$ 6 $×$ 0.035	6 $×$ 6 $×$ 0.035	6 $×$ 6 $×$ 0.063
Hole concentration/cm^-3	4.8 $×$ 10¹⁴	1.5 $×$ 10¹⁵	1.0 $×$ 10¹⁶	3.5 $×$ 10¹⁷

表1 硼掺单晶金刚石样品基本参数

Table 1 Basic parameters of boron-doped single crystal diamond samples

Sample	1#	2#	3#	4#
B/C ratio/ppm	10	50	100	400
Size/mm³	6 $×$ 6 $×$ 0.035	6 $×$ 6 $×$ 0.035	6 $×$ 6 $×$ 0.035	6 $×$ 6 $×$ 0.063
Hole concentration/cm^-3	4.8 $×$ 10¹⁴	1.5 $×$ 10¹⁵	1.0 $×$ 10¹⁶	3.5 $×$ 10¹⁷

图2 掺硼单晶金刚石形貌。（a）掺硼单晶金刚石薄膜光学显微镜图像；（b）掺硼单晶金刚石薄膜SEM照片；（c），（d）掺硼单晶金刚石薄膜AFM照片

Fig.2 Morphology of boron-doped single crystal diamond. （a） Optical microscope image of boron-doped single crystal diamond film；（b） SEM image of boron-doped single crystal diamond film；（c），（d） AFM images of boron-doped single crystal diamond film

图3 掺硼单晶金刚石晶体质量和光学性能表征。（a）掺硼单晶金刚石XRD表征；（b）掺硼单晶金刚石拉曼光谱表征；（c）掺硼单晶金刚石薄膜的光学透过率；（d）掺硼单晶金刚石薄膜的Tauc图

Fig.3 Characterization of the crystal quality of boron-doped single crystal diamond. （a） XRD characterization of boron-doped single crystal diamond；（b） Raman spectroscopy characterization of boron-doped single crystal diamond；（c） optical transmittance of the boron-doped single crystal diamond film；（d） Tauc plot of the boron-doped single crystal diamond film

图4 掺硼单晶金刚石电学性能表征。（a）掺硼单晶金刚石薄膜的空穴浓度和迁移率随硼碳比关系图；（b）本研究工作与国际研究工作对比

Fig.4 Characterization of the electrical properties of boron-doped single crystal diamond. （a） Graph of the relationship between the hole concentration and mobility of the boron-doped single crystal diamond film and the boron-to-carbon ratio；（b） comparison between the work of this study and international research work

图5 掺硼单晶金刚石薄膜的XPS表征。（a）掺硼单晶金刚石薄膜的C 1s谱峰图；（b）掺硼单晶金刚石薄膜的价带图；（c）EB和C 1s位移随空穴浓度变化关系图；（d）掺硼单晶金刚石能带示意图

Fig.5 XPS characterization of boron-doped single crystal diamond films. （a） C 1s peak spectrum of the boron-doped single crystal diamond film；（b） valence band diagram of the boron-doped single crystal diamond film；（c） graph of the relationship between EB and C 1s shift with the change of hole concentration；（d） schematic diagram of the energy band of the boron-doped single crystal diamond

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