衬底晶面对MOCVD同质外延生长n-Ga2O3薄膜性质的影响研究

doi:10.16553/j.cnki.issn1000-985x.2024.0310

摘要/Abstract

摘要： 本文采用金属有机化学气相沉积(MOCVD)工艺,在Fe掺杂的(001)、(010)和(201)晶面的氧化镓(Ga₂O₃)衬底上实现了Si掺杂n型β-Ga₂O₃薄膜的同质外延生长,系统研究了衬底晶面对生长的薄膜晶体质量、生长速度及电学性能的影响。研究结果表明,同质外延生长的n型β-Ga₂O₃薄膜样品均表现出与衬底一致的晶面取向,且双晶摇摆曲线半峰全宽(FWHM)均很小,具有较高的晶体质量;各薄膜的表面粗糙度较低,基本呈现台阶流的生长特征;不同晶面衬底上薄膜同质生长速度存在较大差异,其中(001)晶面衬底上薄膜的生长速度较快,可达1 μm/h以上。在(010)晶面衬底上生长的n型β-Ga₂O₃薄膜,其载流子浓度与迁移率最高,在器件的制备中更具潜力。该项研究将为Ga₂O₃基器件制备提供有力的数据支撑。

关键词: 氧化镓, 金属有机化学气相沉积, 同质外延, 掺杂, 迁移率, 生长速率

Abstract: The homoepitaxial growth of Si-doped n-type β-Ga₂O₃ thin films was achieved on Fe-doped (001), (010), and(201) β-Ga₂O₃ substrates using the metal-organic chemical vapor deposition (MOCVD) technique. The effects of substrate crystal planes on the crystal quality, growth rate, and electrical properties of the epitaxial films were systematically investigated. The results show that the homoepitaxial n-type β-Ga₂O₃ thin films exhibit the same crystallographic orientation as the substrates, with narrow full width at half maximum (FWHM) values in the rocking curves, indicating high crystal quality. The films demonstrate low surface roughness and exhibit step-flow growth characteristics. Significant differences in homoepitaxial growth rates were observed on substrates with different orientations, with the growth rate on the (001) substrate exceeding 1 μm/h. The n-type β-Ga₂O₃ thin films grown on the (010) substrate exhibit the highest carrier concentration and mobility, making them more promising for device fabrication. This study provides valuable data to support the development of Ga₂O₃-based devices.

Key words: gallium oxide, metal-organic chemical vapor deposition, homoepitaxy, doping, mobility, growth rate

中图分类号:

韩宇, 焦腾, 于含, 赛青林, 陈端阳, 李震, 李轶涵, 张钊, 董鑫. 衬底晶面对MOCVD同质外延生长n-Ga₂O₃薄膜性质的影响研究[J]. 人工晶体学报, 2025, 54(3): 438-444.

HAN Yu, JIAO Teng, YU Han, SAI Qinglin, CHEN Duanyang, LI Zhen, LI Yihan, ZHANG Zhao, DONG Xin. Effect of Substrate Crystal Planes on the Properties of Homoepitaxial n-Ga₂O₃ Thin Films Grown by MOCVD[J]. Journal of Synthetic Crystals, 2025, 54(3): 438-444.

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衬底晶面对MOCVD同质外延生长n-Ga₂O₃薄膜性质的影响研究

Effect of Substrate Crystal Planes on the Properties of Homoepitaxial n-Ga₂O₃ Thin Films Grown by MOCVD

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