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人工晶体学报 ›› 2026, Vol. 55 ›› Issue (4): 574-583.DOI: 10.16553/j.cnki.issn1000-985x.2025.0251

• 研究论文 • 上一篇    下一篇

不同格位取代Ca3TaGa3Si2O14晶体的生长及其高温压电性能研究

张慧1(), 李婷婷1, 田东阳2, 彭向康2, 高珍珍2, 王国良2, 刘子健2, 李妍璐2, 于法鹏2()   

  1. 1.先进船舶发动机技术全国重点实验室,上海 201108
    2.山东大学晶体材料全国重点实验室,济南 250100
  • 收稿日期:2025-12-14 出版日期:2026-04-20 发布日期:2026-05-19
  • 通信作者: 于法鹏,博士,教授。E-mail:fapengyu@sdu.edu.cn
  • 作者简介:张慧(1979—),女,山东省人,研究员。E-mail:zhanghui35@126.com
  • 基金资助:
    先进船舶发动机技术全国重点实验室基金(LAB-2025-08-WD);国家重点研发计划(2023YFB3210700)

Growth and High-Temperature Piezoelectric Properties of Ca3TaGa3Si2O14 Crystals with Different Lattice Substitutions

ZHANG Hui1(), LI Tingting1, TIAN Dongyang2, PENG Xiangkang2, GAO Zhenzhen2, WANG Guoliang2, LIU Zijian2, LI Yanlu2, YU Fapeng2()   

  1. 1.State Key Laboratory of Marine Engine Science and Technology,Shanghai 201108,China
    2.State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China
  • Received:2025-12-14 Online:2026-04-20 Published:2026-05-19

摘要: 硅酸镓镧系列晶体因具有较高的电阻率和优异的压电性能,被认为是目前高温压电传感器用优选材料。本文以Ca3TaGa3Si2O14 (CTGS)晶体为主要研究对象,通过提拉法分别生长出A格位(Ca位)Sr取代的(Sr x Ca1-x3TaGa3Si2O14 (SCTGS)晶体与C格位(Ga位)Al取代的Ca3Ta(Ga1-x Al x3Si2O14 (CTGAS)晶体,并研究了不同格位取代后晶体的高温电弹性能。研究表明,Sr取代能够显著提高CTGS晶体的相对介电常数ε11T/ε0和压电常数d11(4.84 pC/N@25 ℃)及d14(-20.17 pC/N@25 ℃);而Al取代能够提高晶体的高温电阻率及电学性能的温度稳定性。两种取代策略均能有效提升CTGS晶体的高温电弹性能,为高温压电传感器用核心敏感元件的研发提供了材料基础。

关键词: 硅酸镓镧; 格位取代; 提拉法; 电阻率; 压电性能; 高温

Abstract: High-temperature piezoelectric sensors are critically needed in extreme-environment applications such as aerospace, nuclear energy, and industrial process monitoring. Traditional piezoelectric ceramics and polymers often exhibit significant performance degradation under high-temperature and low-oxygen conditions. Among emerging high-temperature piezoelectric single crystals, langasite-family crystals, particularly the structurally ordered Ca3TaGa3Si2O14 (CTGS) have attracted considerable attention due to their high resistivity, absence of phase transitions up to their melting point (>1 400 ℃), and suitability for large-size growth via the Czochralski method. However, further enhancement of their electromechanical properties and thermal stability is essential to meet the demands of advanced sensor applications. This study aims to optimize the high-temperature electromechanical properties of CTGS crystals through lattice substitutions. Two distinct substitution strategies were employed: Sr substitution at the A-site (Ca site) to form (Sr x Ca1-x3TaGa3Si2O14 (SCTGS), and Al substitution at the C-site (Ga site) to form Ca3Ta(Ga x Al1-x3Si2O14 (CTGAS). Crystals with varying substitution ratios (x=0.25, 0.50 for Sr; x=0.30, 0.50 for Al) were grown by the Czochralski method under N2 atmosphere using iridium crucibles. The crystalline quality was evaluated by high-resolution X-ray diffraction rocking curves, showing full-width half-maximum values between 33.41″ and 58.73″, which confirmed good crystallinity. Resistivity was measured from 350 ℃ to 800 ℃ along the crystallographic Y- and Z-directions. Results indicate that the Al substitution significantly increases the high-temperature resistivity, with 50%CTGAS reaching approximately 1×107 Ω·cm at 800 ℃ along the Z-direction. In contrast, Sr substitution reduces resistivity, with 50%SCTGS exhibiting ~1×105 Ω·cm under the same conditions. Dielectric and piezoelectric properties were systematically characterized from room temperature to 800 ℃ using specifically designed crystal cuts (X-cut, Z-cut, XYt/0°, and YZt/45°). Results indicate that the Sr substitution notably enhances the room-temperature piezoelectric coefficients: d11 and d14 reaches 4.84 and -20.17 pC/N for 50%SCTGS, representing increases of 16.1% and 81.2%, respectively, over pure CTGS. The relative dielectric permittivity ε11T/ε0 also increases with the increase of Sr content. In contrast, Al-substituted crystals retaines piezoelectric coefficients similar to pure CTGS while markedly improving thermal stability. The variation in piezoelectric coefficient d11 is less than 10.5% across 25~800 ℃, and dielectric loss remained below 0.2 up to 600 ℃. To elucidate the mechanisms, bond-valence-based calculations of polyhedral dipole moments were performed. Results indicate that the large dipole moment of the [SrO8] polyhedron (12.204 5 D) in SCTGS accounts for its enhanced piezoelectric response, whereas the reduces dipole moment in [CaO8] and improves structural order upon Al substitution explain the superior resistivity and thermal stability of CTGAS. In conclusion, Sr substitution could effectively enhance the piezoelectric activity of CTGS crystals, while Al substitution could significantly improve high-temperature resistivity and electromechanical stability. This work demonstrates that site-specific substituting is a powerful strategy for tailoring CTGS-based materials toward specific high-temperature sensor requirements.

Key words: langasite; substitution; Czochralski method; resistivity; piezoelectric property; high-temperature

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