Investigation of Boron Implanted Terminations for β-Ga2O3 Schottky Barrier Diodes

doi:10.16553/j.cnki.issn1000-985x.2024.0287

Abstract

Abstract: β-Ga₂O₃ is regarded as a promising semiconductor material for the next-generation high-power and high-efficiency power electronic devices for its exceptional physical properties such as wide bandgap and high breakdown electrical field. However, the Ga₂O₃ Schottky barrier diode (SBD) without terminations are prone to generate the peak electric fields at the edges of the Schottky electrodes, causing premature breakdown of the device, affecting its breakdown characteristics. To address this, a buried high-resistance termination achieved by selectively boron (B) ion implantation at the edge of the Schottky electrode is proposed to modulate the edge electric fields and improve the breakdown voltage. The B ions were implanted with an energy of 60 keV and a dose of 7×10¹⁴ cm^-2. The implantation depth was evaluated as approximately 200 nm by simulations. With B ion implantation, the on-state characteristics of the Ga₂O₃ SBD are not changed and the specific on-resistance is still as low as 2.5 mΩ·cm², whereas the breakdown voltage is significantly improved from 429 V to 1 402 V, which is 226% increased. The corresponding power figure of merit is improved from 74 MW/cm² to 767 MW/cm². The electric field simulations reveal that the peak electric field at the edge of the Schottky electrode is substantially suppressed with B implantation, and it decreases with the increase of the implantation depth. This work provides a new approach for the design of terminations for high-performance Ga₂O₃ power devices.

Key words: β-Ga₂O₃, SBD, B ion-implant, edge termination, breakdown voltage

CLC Number:

O47
TN32

SHEN Rui, YU Xinxin, LI Zhonghui, CHEN Duanyang, SAI Qingling, QIAO Bing, ZHOU Likun, DONG Xin, QI Hongji, CHEN Tangsheng. Investigation of Boron Implanted Terminations for β-Ga₂O₃ Schottky Barrier Diodes[J]. Journal of Synthetic Crystals, 2025, 54(3): 524-529.

References

[1] MASTRO M A, KURAMATA A, CALKINS J, et al. Perspective: opportunities and future directions for Ga₂O₃[J]. ECS Journal of Solid State Science and Technology, 2017, 6(5): P356-P359.
[2] ZHANG J Y, SHI J L, QI D, et al. Recent progress on the electronic structure, defect, and doping properties of Ga₂O₃[J]. APL Materials, 2020, 8(2): 020906.
[3] REN F, YANG J C, FARES C, et al. Device processing and junction formation needs for ultra-high power Ga₂O₃ electronics[J]. MRS Communications, 2019, 9(1): 77-87.
[4] HIGASHIWAKI M, SASAKI K, MURAKAMI H, et al. Recent progress in Ga₂O₃ power devices[J]. Semiconductor Science Technology, 2016, 31(3): 034001.
[5] 汪正鹏, 张崇德, 孙新雨, 等. 切割角蓝宝石基氧化镓薄膜MOCVD外延及日盲紫外光电探测器制备[J]. 人工晶体学报, 2023, 52(6): 1007-1015.
WANG Z P, ZHANG C D, SUN X Y, et al. MOCVD epitaxy of β-Ga₂O₃ films on off-cut angled sapphire substrates and fabrication of solar-blind ultraviolet photodetector[J]. Journal of Synthetic Crystals, 2023, 52(6): 1007-1015 (in Chinese).
[6] 陈绍华, 穆文祥, 张晋, 等. Ni掺杂β-Ga₂O₃单晶的光、电特性研究[J]. 人工晶体学报, 2023, 52(8): 1373-1377.
CHEN S H, MU W X, ZHANG J, et al. Optical and electrical properties of Ni-doped β-Ga₂O₃ single crystal[J]. Journal of Synthetic Crystals, 2023, 52(8): 1373-1377 (in Chinese).
[7] 李信儒, 侯童, 马旭, 等. 斜切角对β-Ga₂O₃(100)面衬底加工的影响研究[J]. 人工晶体学报, 2023, 52(9): 1570-1575.
LI X R, HOU T, MA X, et al. Study on the influence of miscut-angle on the processing of β-Ga₂O₃(100) plane substrate[J]. Journal of Synthetic Crystals, 2023, 52(9): 1570-1575 (in Chinese).
[8] SASAKI K, HIGASHIWAKI M, KURAMATA A, et al. Ga₂O₃ Schottky barrier diodes fabricated by using single-crystal β-Ga₂O₃ (010) substrates[J]. IEEE Electron Device Letters, 2013, 34(4): 493-495.
[9] DONG P F, ZHANG J C, YAN Q L, et al. 6 kV/3.4 mΩ·cm² vertical β-Ga₂O₃ Schottky barrier diode with BV²/R_on,_sp performance exceeding 1-D unipolar limit of GaN and SiC[J]. IEEE Electron Device Letters, 2022, 43(5): 765-768.
[10] 何云龙, 洪悦华, 王羲琛, 等. 氧化镓材料与功率器件的研究进展[J]. 电子与封装, 2023, 23(1): 69-76.
HE Y L, HONG Y H, WANG X C, et al. Progress of gallium oxide materials and power devices[J]. Electronics & Packaging, 2023, 23(1): 69-76 (in Chinese).
[11] ROY S, BHATTACHARYYA A, RANGA P, et al. High-k oxide field-plated vertical (001) β-Ga₂O₃ Schottky barrier diode with Baliga's figure of merit over 1 GW/cm²[J]. IEEE Electron Device Letters, 2021, 42(8): 1140-1143.
[12] OTSUKA F, MIYAMOTO H, TAKATSUKA A, et al. Large-size (1.7×1.7 mm²) β-Ga₂O₃ field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 10⁹ high on/off current ratio[J]. Applied Physics Express, 2021, 15: 016501.
[13] LI W S, NOMOTO K, HU Z Y, et al. Field-plated Ga₂O₃ trench Schottky barrier diodes with a BV²/R_on,sp of up to 0.95 GW/cm²[J]. IEEE Electron Device Letters, 2020, 41(1): 107-110.
[14] DHARA S, KALARICKAL N K, DHEENAN A, et al. β-Ga₂O₃ Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination[J/OL]. Applied Physics Letters,2022. DOI: 10.1063/5.6123284.
[15] ZHOU H, YAN Q L, ZHANG J C, et al. High-performance vertical β-Ga₂O₃ Schottky barrier diode with implanted edge termination[J]. IEEE Electron Device Letters, 2019, 40(11): 1788-1791.
[16] LIN C H, YUDA Y, WONG M H, et al. Vertical Ga₂O₃ Schottky barrier diodes with guard ring formed by nitrogen-ion implantation[J]. IEEE Electron Device Letters, 2019, 40(9): 1487-1490.
[17] GAO Y Y, LI A, FENG Q, et al. High-voltage β-Ga₂O₃ Schottky diode with argon-implanted edge termination[J]. Nanoscale Research Letters, 2019, 14(1): 8.
[18] LIU H Y, WANG Y G, LV Y J, et al. 10-kV lateral β-Ga₂O₃ MESFETs with B ion implanted planar isolation[J]. IEEE Electron Device Letters, 2023, 44(7): 1048-1051.
[19] ZHANG J Y, YANG Z N, KUANG S L, et al. Electronic structure and surface band bending of Sn-doped β-Ga₂O₃ thin films studied by X-ray photoemission spectroscopy and ab initiocalculations[J]. Physical Review B, 2024, 110(11): 115120.

Investigation of Boron Implanted Terminations for β-Ga₂O₃ Schottky Barrier Diodes

PDF (PC)

Knowledge

Abstract

Cite this article

share this article

References

Related Articles 15

Recommended Articles

Metrics

Comments

[1]	LI Qi, FU Bo, YU Bowen, ZHAO Hao, LIN Na, JIA Zhitai, ZHAO Xian, TAO Xutang. First-Principle Study on the Interaction Between Al/In Doping and (100) Twins in β-Ga₂O₃ [J]. Journal of Synthetic Crystals, 2025, 54(3): 371-377.
[2]	JIANG Bowen, JI Weiguo, ZHANG Lu, FAN Qiming, PAN Mingyan, HUANG Haotian, QI Hongji. Flow Field Symmetry of β-Ga₂O₃ Crystal Growth by EFG [J]. Journal of Synthetic Crystals, 2025, 54(3): 378-385.
[3]	WANG Junlan, LI Zaoyang, YANG Yao, QI Chongchong, LIU Lijun. Evaluation and Control of Crystallization Interface Deformation in the Growth of 6-Inch β-Ga₂O₃ Crystals by EFG Method [J]. Journal of Synthetic Crystals, 2025, 54(3): 396-406.
[4]	HUO Xiaoqing, ZHANG Shengnan, ZHOU Jinjie, WANG Yingmin, CHENG Hongjuan, SUN Qisheng. Preparation and Properties of 3~4 Inch Fe Doped β-Ga₂O₃ Single Crystal with High Resistance [J]. Journal of Synthetic Crystals, 2025, 54(3): 407-413.
[5]	WEN Junpeng, HAO Weibing, HAN Zhao, XU Guangwei, LONG Shibing. Mesa Termination Technology for NiO/β-Ga₂O₃ Heterojunction Diode [J]. Journal of Synthetic Crystals, 2025, 54(3): 517-523.
[6]	WANG Yuefei, GAO Chong, WU Zhe, LI Bingsheng, LIU Yichun. Study on the Epitaxial Growth of Gallium Oxide Heterostructure and UV Photodetector by Double Chamber Interconnected MOCVD [J]. Journal of Synthetic Crystals, 2025, 54(3): 426-437.
[7]	CHEN Xuyang, LI Haobo, QIN Huayao, XU Mingyao, LU Yinmei, HE Yunbin. A Novel Suboxide Chemical Vapor Transport Technique for Cost-Effective Growth of β-Ga₂O₃ Thick Films [J]. Journal of Synthetic Crystals, 2025, 54(3): 445-451.
[8]	YANG Wenjuan, BU Yuzhe, SAI Qinglin, QI Hongji. Dislocation Defects and Their Distribution Characteristics in Ga₂O₃ Crystal Grown by Edge-Defined Film-Fed Growth Method [J]. Journal of Synthetic Crystals, 2025, 54(3): 414-419.
[9]	HE Song, LIU Jinyang, HAO Weibing, XU Guangwei, LONG Shibing. Investigation of Single-Event Effects of β-Ga₂O₃ Schottky Barrier Diodes with Mesa Termination [J]. Journal of Synthetic Crystals, 2025, 54(3): 511-516.
[10]	ZHANG Ziqi, YANG Zhenni, KUANG Siliang, WEI Shenglong, XU Wenjing, CHEN Duanyang, QI Hongji, ZHANG Hongliang. Electronic Transport Properties of Sn-Doped β-Ga₂O₃ (010) Thin Films Grown by MBE Homoepitaxial Growth [J]. Journal of Synthetic Crystals, 2025, 54(2): 244-254.
[11]	HUANG Dongyang, HUANG Haotian, PAN Mingyan, XU Ziqian, JIA Ning, QI Hongji. Growth and Properties of β-Ga₂O₃ Single Crystal by Vertical Bridgman Method [J]. Journal of Synthetic Crystals, 2025, 54(2): 190-196.
[12]	XIE Yinfei, HE Yang, LIU Weiye, XU Wenhui, YOU Tiangui, OU Xin, GUO Huaixin, SUN Huarui. Recent Progress on Thermal Management of Ultrawide Bandgap Gallium Oxide Power Devices [J]. Journal of Synthetic Crystals, 2025, 54(2): 290-311.
[13]	QU Minmin, YU Jiangang, LI Ziwei, LI Wangwang, LEI Cheng, LI Tengteng, LI Fengchao, LIANG Ting, JIA Renxu. Simulation Study on Electrical Performance of a New Composite Terminal Gallium Oxide Schottky Diode [J]. Journal of Synthetic Crystals, 2025, 54(2): 348-357.
[14]	YANG Xiaolong, TANG Huili, ZHANG Chaoyi, SUN Peng, HUANG Lin, CHEN Long, XU Jun, LIU Bo. Growth and Spectral Properties of Bi-Doped β-Ga₂O₃ Single Crystal by Optical Floating Zone Method [J]. Journal of Synthetic Crystals, 2025, 54(2): 202-211.
[15]	WANG Kaikai, DU Song, XU Hao, LONG Hao. Performance Optimization Study of Ga₂O₃/NiO_x Schottky Barrier Diodes [J]. Journal of Synthetic Crystals, 2025, 54(2): 337-347.