Journal of Synthetic Crystals ›› 2025, Vol. 54 ›› Issue (6): 979-985.DOI: 10.16553/j.cnki.issn1000-985x.2025.0013
• Research Articles • Previous Articles Next Articles
LI Yazhou1,2(), MA Zhanhong1(
), YAO Weizhen2(
), YANG Shaoyan2, LIU Xianglin2, LI Chengming2, WANG Zhanguo2
Received:
2025-01-15
Online:
2025-06-20
Published:
2025-06-23
CLC Number:
LI Yazhou, MA Zhanhong, YAO Weizhen, YANG Shaoyan, LIU Xianglin, LI Chengming, WANG Zhanguo. Effect of MOCVD Carrier Gas Flow Rate on GaN Epitaxial Growth[J]. Journal of Synthetic Crystals, 2025, 54(6): 979-985.
Sample | Carrier gas flow rate/slm | Increase/decrease |
---|---|---|
A | 12 | -60% |
B | 21 | -30% |
C | 30 | 0 |
D | 39 | +30% |
E | 48 | +60% |
Table 1 H2 carrier gas flow rate values for different samples
Sample | Carrier gas flow rate/slm | Increase/decrease |
---|---|---|
A | 12 | -60% |
B | 21 | -30% |
C | 30 | 0 |
D | 39 | +30% |
E | 48 | +60% |
1 | ZHONG Y Z, ZHANG J W, WU S, et al. A review on the GaN-on-Si power electronic devices[J]. Fundamental Research, 2022, 2(3): 462-475. |
2 | UDABE A, BARAIA-ETXABURU I, DIEZ D G. Gallium nitride power devices: a state of the art review[J]. IEEE Access, 2023, 11: 48628-48650. |
3 |
GOSWAMI L, AGGARWAL N, VASHISHTHA P, et al. Fabrication of GaN nano-towers based self-powered UV photodetector[J]. Scientific Reports, 2021, 11(1): 10859.
DOI PMID |
4 | 夏政辉, 李腾坤, 任国强, 等. 氨热法GaN单晶生长的位错密度演变研究[J]. 人工晶体学报, 2024, 53(3): 480-486. |
XIA Z H, LI T K, REN G Q, et al. Dislocation density evolution study of GaN single crystal growth by ammonothermal method[J]. Journal of Synthetic Crystals, 2024, 53(3): 480-486 (in Chinese). | |
5 | MILAKHIN D, MALIN T, MANSUROV V, et al. Tackling residual tensile stress in AlN-on-Si nucleation layers via the controlled Si(111) surface nitridation[J]. Surfaces and Interfaces, 2024, 51: 104817. |
6 | TANG L, TANG B, ZHANG H, et al. Review-review of research on AlGaN MOCVD growth[J]. ECS Journal of Solid State Science and Technology, 2020, 9(2): 24009-24027. |
7 | NIU H D, YAO W Z, YANG S Y, et al. Effects of pressure on GaN growth in a specific warm-wall MOCVD reactor[J]. CrystEngComm, 2023, 25(8): 1263-1269. |
8 | SHEN Y, ZHANG X, FAN A J, et al. Effects of V/Ⅲ ratio on structural, optical, and electrical properties of semi-polar high Al-content Si-doped n-AlGaN epi-layers[J]. Materials Science in Semiconductor Processing, 2022, 151: 107002. |
9 | 庞 博, 宿星亮. 不同载气对GaN薄膜外延生长影响的研究进展[J]. 当代化工研究, 2023(18): 8-11. |
PANG B, SU X L. Research progress on effect of different carrier gases on the epitaxial growth of GaN[J]. Modern Chemical Research, 2023(18): 8-11 (in Chinese). | |
10 | ARIFIN P, SUTANTO H, SUGIANTO, et al. Plasma-assisted MOCVD growth of non-polar GaN and AlGaN on Si(111) substrates utilizing GaN-AlN buffer layer[J]. Coatings, 2022, 12(1): 94. |
11 | LI Y Z, YAO W Z, MA Z H, et al. Effect of gas pre-decomposition device on the growth of GaN epitaxial layer[J]. Semiconductor Science Technology, 2024, 39(7): 075005. |
12 | 邓旭光, 韩 军, 邢艳辉, 等. H2载气流量对AlN缓冲层生长的影响[J]. 发光学报, 2013, 34(6): 776-781. |
DENG X G, HAN J, XING Y H, et al. Influence of H2 carrier gas on epitaxy of AlN buffer layer[J]. Chinese Journal of Luminescence, 2013, 34(6): 776-781 (in Chinese). | |
13 | 张 红, 唐 留. GaN-MOVPE寄生反应的密度泛函理论研究[J]. 化工学报, 2019, 70(9): 3275-3282. |
ZHANG H, TANG L. Density functional theory study on parasitic reactions of GaN-MOVPE[J]. CIESC Journal, 2019, 70(9): 3275-3282 (in Chinese). | |
14 | MATSUMOTO K, TACHIBANA A. Growth mechanism of atmospheric pressure MOVPE of GaN and its alloys: gas phase chemistry and its impact on reactor design[J]. Journal of Crystal Growth, 2004, 272(1/2/3/4): 360-369. |
15 | ZHAO D G, ZHU J J, JIANG D S, et al. Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition[J]. Journal of Crystal Growth, 2006, 289(1): 72-75. |
16 | ZHANG Z, FANG H S, YAO Q X, et al. Species transport and chemical reaction in a MOCVD reactor and their influence on the GaN growth uniformity[J]. Journal of Crystal Growth, 2016, 454: 87-95. |
17 | HARDTDEGEN H, KALUZA A, GAUER D, et al. On the influence of gas inlet configuration with respect to homogeneity in a horizontal single wafer MOVPE reactor[J]. Journal of Crystal Growth, 2001, 223(1/2): 15-20. |
18 | BANAL R G, FUNATO M, KAWAKAMI Y. Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy[J]. Applied Physics Letters, 2008, 92(24): 241905. |
19 | TARSA E J, HEYING B, WU X H, et al. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy[J]. Journal of Applied Physics, 1997, 82(11): 5472-5479. |
20 | WONG Y Y, CHANG E Y, WU Y H, et al. Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy[J]. Thin Solid Films, 2011, 519(19): 6208-6213. |
21 | ZHANG Y H, YANG J, ZHAO D G, et al. Adjustment of Al atom migration ability and its effect on the surface morphology of AlN grown on sapphire by metal-organic chemical vapor deposition[J]. Semiconductor Science and Technology, 2021, 36(10): 105010. |
22 | WANG B B, YANG J, ZHAO D G, et al. The mechanisms of AlGaN device buffer layer growth and crystalline quality improvement: restraint of gallium residues, mismatch stress relief, and control of aluminum atom migration length[J]. Crystals, 2022, 12(8): 1131. |
23 | HEYING B, WU X H, KELLER S, et al. Role of threading dislocation structure on the X-ray diffraction peak widths in epitaxial GaN films[J]. Applied Physics Letters, 1996, 68(5): 643-645. |
24 | SU X J, ZHANG J C, HUANG J, et al. Defect structure of high temperature hydride vapor phase epitaxy-grown epitaxial (0001) AlN/sapphire using growth mode modification process[J]. Journal of Crystal Growth, 2017, 467: 82-87. |
25 | ZHANG J, YANG X L, FENG Y X, et al. Vacancy-engineering-induced dislocation inclination in Ⅲ-nitrides on Si substrates[J]. Physical Review Materials, 2020, 4(7): 073402. |
26 | 彭冬生, 冯玉春, 牛憨笨. MOCVD法横向外延过生长GaN薄膜[J]. 电子元件与材料, 2009, 28(2): 66-69. |
PENG D S, FENG Y C, NIU H B. Lateral epitaxial overgrowth GaN thin film with MOCVD[J]. Electronic Components and Materials, 2009, 28(2): 66-69 (in Chinese). | |
27 | LIU X T, LI D B, SUN X J, et al. Stress-induced in situ epitaxial lateral overgrowth of high-quality GaN[J]. CrystEngComm, 2014, 16(34): 8058-8063. |
28 | AHMED R, SIDDIQUE A, ANDERSON J, et al. Integration of GaN and diamond using epitaxial lateral overgrowth[J]. ACS Applied Materials & Interfaces, 2020, 12(35): 39397-39404. |
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