Proton Irradiation Effect of β -Ga2O3 Schottky Barrier Diode Based on Monte Carlo Method

doi:10.16553/j.cnki.issn1000-985x.2025.0190

Abstract

Abstract: In this paper，the SRIM-2013 sofware based on Monte Carlo method was used to simulate the irradiation damage of β-Ga₂O₃ by protons with energy of 10 ~ 1 000 keV，and by combining with the thermionic emission （TE） model，the effect of proton irradiation on the reverse leakage performance of β-Ga₂O₃ Schottky barrier diode （SBD） was studied. The simulation results indicate that the stopping power of extranuclear electrons is much greater than stopping power of atomic nucleus. With the proton irradiation dose increases，the displacement per atom （DPA） and Ga vacancy （V_Ga） concentrations gradually increase，with peak values of 0.007 65 and 3.48 × 10²⁰ cm^-3，respectively. With the irradiation energy increases，the irradiation damage gradually penetrates into the interior of β-Ga₂O₃ target，but the DPA and V_Ga concentrations gradually decrease. The analysis of the TE model shows that when the carrier concentration decreases from 1×10¹⁹ cm^-3 to 1×10¹⁶ cm^-3，the reverse leakage current density decreases，the device reverse leakage performance is significantly improved. The large amount of V_Ga generated by proton irradiation compensates some carrier，weakening the effect of mirror force on the Schottky barrier，which may be the main reason for the improvement of the reverse leakage performance of β-Ga₂O₃ SBD devices.

Key words: β-Ga₂O₃; proton irradiation; SRIM; Schottky barrier diode; thermionic emission

CLC Number:

TN31

SHI Daotian, SUN Qing, QIAN Yewang, LIU Chuanyang, WU Weifeng, LIU Jingjing, WANG Xinjian, CHEN Zhong, RUAN Zairan, WANG Yangjinghan. Proton Irradiation Effect of β -Ga₂O₃ Schottky Barrier Diode Based on Monte Carlo Method[J]. Journal of Synthetic Crystals, 2026, 55(2): 233-240.

Figures/Tables 9

Fig.1 Average projection range and fitting results of protons with different energy in β-Ga2O3

Table 1 Thickness of β -Ga2O3 target corresponding to different proton energies

Proton energy/keV	10	20	50	100	200	350	500	750	1 000
Thickness of β-Ga₂O₃ target/μm	0.2	0.3	0.5	0.8	1.5	2.5	4.0	6.5	10.0

Fig.2 Electron stopping power and nuclear stopping power （a） and ionization energy loss and vacancy energy loss （b） under irradiation of protons with different energy

Fig.3 Variation curves of DPA with target thickness. （a） Under irradiation of protons with different doses；（b） under irradiation of protons with different energy

Fig.4 Variation curves of VGa concentration with target depth. （a） Under irradiation of protons with different energy；（b） under irradiation of protons with different doses

Table 2 Proton injection energy and doses

Frequency	Proton injection energy/keV	Proton injection dose/cm^-2
First	10	1×10¹³
Second	50	1×10¹³
Third	100	7×10¹²

Fig.5 Variation curves of VGa concentration distribution with target depth after irradiation of protons with different energy

Fig.6 ΔφB of β-Ga2O3 SBD. （a） Variation curves with applied reverse bias voltage；（b） variation curves with donor concentrations

Fig.7 Variation curves of reverse leakage current density of β-Ga2O3 SBD with applied reverse bias voltage different electron concentrations

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Proton Irradiation Effect of β -Ga₂O₃ Schottky Barrier Diode Based on Monte Carlo Method

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