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人工晶体学报 ›› 2025, Vol. 54 ›› Issue (3): 470-490.DOI: 10.16553/j.cnki.issn1000-985x.2024.0315

• 器件制备 • 上一篇    下一篇

氧化镓异质衬底集成技术研究进展

瞿振宇1, 徐文慧1, 江昊东2, 梁恒硕1, 赵天成1, 谢银飞3, 孙华锐3, 邹新波2, 游天桂1, 齐红基4,5, 韩根全6, 欧欣1   

  1. 1.中国科学院上海微系统与信息技术研究所,集成电路材料全国重点实验室,上海 200050;
    2.上海科技大学信息科学与 技术学院,上海 201210;
    3.哈尔滨工业大学(深圳),微纳光电信息系统理论与技术工业和信息化部重点实验室, 深圳 518055;
    4.中国科学院上海光学精密机械研究所,强激光材料重点实验室,上海 201800;
    5.杭州光学精密机械研究所,杭州 311421;
    6.西安电子科技大学微电子学院,西安 710071
  • 收稿日期:2024-12-13 出版日期:2025-03-15 发布日期:2025-04-03
  • 通信作者: 徐文慧,博士,助理研究员。E-mail:xuwh@mail.sim.ac.cn; 徐文慧,博士,中国科学院上海微系统与信息技术研究所助理研究员。主要从事高导热氧化镓异质集成技术研究,在IEDM、Appl Mater Interfaces、Fundamental Res、IEEE EDL、Appl Phys Lett等会议期刊发表论文30余篇;申请专利30余件,已授权中、美、日专利共15件。欧 欣,博士,研究员。E-mail:ouxin@mail.sim.ac.cn; 欧 欣,博士生导师,中国科学院上海微系统与信息技术研究所硅基材料与集成器件实验室主任,二级研究员。主要从事基于“万能离子刀”技术的异质集成XOI材料与器件研究。先后发表SCI/EI论文近200篇,其中125篇以第一/通信作者发表在Nature、Nature Com、PRL、Adv Mater、Nano Lett、Light、Optica、Appl Phys Rev等著名期刊及IEEE顶会包括IEDM、IMS、MEMS、IUS、EDTM等;参著三本英文专著和一本中文专著;申请专利230余件,已授权100余件,成果转化44件。
  • 作者简介:瞿振宇(1999—),男,江苏省人,博士研究生。E-mail:zyqu@mail.sim.ac.cn
  • 基金资助:
    上海市战略前沿项目(24DP1500100);国家自然科学基金(62404236,62293520,62293521)

Research Progress on Heterogeneous Substrate Integration Technology for Gallium Oxide

QU Zhenyu1, XU Wenhui1, JIANG Haodong2, LIANG Hengshuo1, ZHAO Tiancheng1, XIE Yinfei3, SUN Huarui3, ZOU Xinbo2, YOU Tiangui1, QI Hongji4,5, HAN Genquan6, OU Xin1   

  1. 1. State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    2. School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China;
    3. Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen, Shenzhen 518055, China;
    4. Advanced Laser and Optoelectronic Functional Materials Department, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;
    5. Hangzhou Institute of Optics and Fine Mechanics, Hangzhou 311421, China;
    6. School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2024-12-13 Online:2025-03-15 Published:2025-04-03

摘要: 超宽禁带氧化镓在高功率和射频器件领域显示出巨大发展潜力。然而,氧化镓固有的极低热导率和p型掺杂困难问题限制了其器件性能和结构设计。异质集成是突破单一材料性能极限,变革提升器件性能的关键技术。本文综述了异质外延、机械剥离和离子束剥离转移三种氧化镓异质集成技术的最新研究进展,重点对比分析不同集成技术在材料质量、电学和热学特性及器件性能等方面的优缺点,并针对衬底种类、界面成键方式、过渡层厚度对纵向散热和电子输运的影响进行探讨。同时,本文对当前氧化镓异质集成技术所面临的挑战进行分析,并对氧化镓异质集成技术未来的发展趋势进行展望,旨在唤起国内氧化镓异质集成衬底相关研究,推动氧化镓异质集成器件开发,加快推进氧化镓材料和器件产业化应用。

关键词: 氧化镓, 异质衬底集成, 异质外延, 机械剥离, 离子束剥离转移, 热管理

Abstract: As a wide-bandgap semiconductor, β-Ga2O3 holds immense promise for high-power and radio frequency devices. However, its inherently low thermal conductivity and difficulties in p-type doping hinder its device performance and structural design. Heterogeneous integration has emerged as a critical technology to overcome the limitations of single materials and revolutionize device performance. This review summarizes the latest research progress in three heterogeneous integration techniques for β-Ga2O3∶ heteroepitaxy, mechanical exfoliation, and ion-cutting technique. The advantages and disadvantages of different integration techniques in terms of material quality, electrical and thermal properties, and device performance are comparatively analyzed. Additionally, the effects of substrate types, interfacial bonding, and interface layer thickness on heat dissipation and vertical electron transport are discussed. This review also analyzes the current challenges faced byβ-Ga2O3 heterogeneous integration technology and prospects its future development trends, aiming to stimulate domestic research on β-Ga2O3 heterogeneous integrated substrates, promote the development of β-Ga2O3 heterogeneous integrated devices, and accelerate the industrialization of β-Ga2O3 materials and devices.

Key words: Ga2O3, heterogenous substrate integration, heteroepitaxy, mechanical exfoliation, ion-cutting, thermal management

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