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人工晶体学报 ›› 2026, Vol. 55 ›› Issue (3): 475-485.DOI: 10.16553/j.cnki.issn1000-985x.2025.0195

• 研究论文 • 上一篇    下一篇

化学气相沉积ZnS过程中气体流型的多参数调控数值模拟

王虎1(), 赵小玻1(), 闫昊2, 卢志辰1, 曹艳翠3, 张绍锋1, 石林2, 马鹏飞1   

  1. 1.中材人工晶体研究院(山东)有限公司,济南 250200
    2.中核第七研究设计院有限公司,太原 030032
    3.中材人工晶体研究院有限公司,北京 100018
  • 收稿日期:2025-09-08 出版日期:2026-03-20 发布日期:2026-04-08
  • 通信作者: 赵小玻,博士,教授级高工。Email:13964431625@163.com
  • 作者简介:王虎(1997—),男,山东省人,硕士。E-mail:1473011026@qq.com

Numerical Simulation of Multi-Parameter Control of Gas Flow Patterns During Chemical Vapor Deposition of ZnS

WANG Hu1(), ZHAO Xiaobo1(), YAN Hao2, LU Zhichen1, CAO Yancui3, ZHANG Shaofeng1, SHI Lin2, MA Pengfei1   

  1. 1.Sinoma Synthetic Crystals (Shandong) Co. ,Ltd. ,Jinan 250200,China
    2.CNNC No. 7 Research and Design Institute Co. ,Ltd. ,Taiyuan 030032,China
    3.Sinoma Synthetic Crystals Co. ,Ltd. ,Beijing 100018,China
  • Received:2025-09-08 Online:2026-03-20 Published:2026-04-08

摘要: 本文采用FLUENT软件对化学气相沉积(CVD)硫化锌(ZnS)过程中沉积室内的气体流型展开数值模拟研究。聚焦锌(Zn)蒸气与硫化氢(H2S)气体的流动特性,通过构建沉积室三维物理模型,系统分析不同工艺参数协同作用下气体流场的分布规律。研究重点包括沉积室内压力及原料进气速度等参数下的沉积室气体流型分布、密度流场形态分布、速度流场及温度流场的演化,揭示气体流型对ZnS沉积速率均匀性及材料生长质量的影响机制。结果表明,随着沉积压力从3 000 Pa增至6 000 Pa、喷嘴速度同步提升,沉积室气体流型呈现“紊乱-有序-稳定-失稳”的协同演化趋势。本工作为实现高质量ZnS材料的可控生长提供理论依据与工艺优化方向,对红外光学材料制备具有重要指导价值。

关键词: ZnS; 气相沉积; 数值模拟; 气体流型; 压力调控; 入口优化; 生长速率

Abstract: Numerical simulation studies on gas flow patterns in the deposition chamber during chemical vapor deposition (CVD) of zinc sulfide (ZnS) were conducted using FLUENT software. Focusing on the flow characteristics of zinc(Zn) vapor and hydrogen sulfide (H2S) gas, a three-dimensional physical model of the deposition chamber was established, and the distribution characteristics of the gas flow field under the synergistic effects of various process parameters were systematically analyzed. The study emphasized the distribution of gas flow patterns, density flow fields, velocity flow fields, and the evolution of temperature fields under parameters such as chamber pressure and reactant inlet velocity. It aims to reveal how gas flow patterns influence the uniformity of ZnS deposition rates and the quality of material growth. Results indicate that as the deposition pressure increases from 3 000 Pa to 6 000 Pa and the nozzle velocity synchronously increases, the gas flow patterns in the deposition chamber exhibit a synergistic evolution trend of “disordered-ordered-stable-instable”. This work provides a theoretical basis and process optimization directions for the controllable growth of high-quality ZnS materials, and offers significant guiding value for the preparation of infrared optical materials.

Key words: ZnS; vapor deposition; numerical simulation; gas flow pattern; pressure regulation; inlet optimization; growth rate

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