MOCVD生长的外延层掺杂氧化镓场效应晶体管

doi:10.16553/j.cnki.issn1000-985x.2024.0284

人工晶体学报 ›› 2025, Vol. 54 ›› Issue (2): 312-318.DOI: 10.16553/j.cnki.issn1000-985x.2024.0284

MOCVD生长的外延层掺杂氧化镓场效应晶体管

郁鑫鑫¹, 沈睿^1,2, 于含³, 张钊³, 赛青林⁴, 陈端阳^4,5, 杨珍妮^5,6, 谯兵¹, 周立坤¹, 李忠辉^1,2, 董鑫³, 张洪良⁶, 齐红基^4,5, 陈堂胜²

1.南京电子器件研究所,中国电科碳基电子重点实验室,南京 210016;
2.固态微波器件与电路全国重点实验室,南京 210016;
3.吉林大学电子科学与工程学院,集成光电子国家重点实验室,长春 130012;
4.中国科学院上海光学精密机械研究所,上海 201800;
5.杭州富加镓业科技有限公司,杭州 311421;
6.厦门大学化学化工学院,厦门 361005

收稿日期:2024-11-20 出版日期:2025-02-15 发布日期:2025-03-04
通信作者: 李忠辉,博士,研究员,E-mail:zhonghuili@126.com
作者简介:郁鑫鑫(1988—),男,江苏省人,博士,高级工程师。E-mail:yuxx711@126.com
基金资助:
国家重点研发计划(2022YFB3605504)

β-Ga₂O₃ Field-Effect Transistors with Doped Epitaxial Layer Grown by MOCVD

YU Xinxin¹, SHEN Rui^{1, 2}, YU Han³, ZHANG Zhao³, SAI Qinglin⁴, CHEN Duanyang^{4, 5}, YANG Zhenni^{5, 6}, QIAO Bing¹, ZHOU Likun¹, LI Zhonghui^{1, 2}, DONG Xin³, ZHANG Hongliang⁶, QI Hongji^{4, 5}, CHEN Tangsheng²

1. CETC Key Laboratory of Carbon-based Electronics, Nanjing Electronic Devices Institute, Nanjing 210016, China;
2. National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing 210016, China;
3. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China;
4. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;
5. Fujia Gallium Technology Co. Ltd., Hangzhou 311421, China;
6. College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China

Received:2024-11-20 Online:2025-02-15 Published:2025-03-04

摘要/Abstract

摘要： 本文基于Ga₂O₃ MOCVD外延材料,开展了Ga₂O₃场效应晶体管的研制和性能研究。为了降低器件的导通电阻,优化了外延层设计,将掺杂浓度提高至1×10¹⁸ cm^-3以上。通过长沟道器件提取的外延层的电子浓度和场效应迁移率分别为2×10¹⁸ cm^-3和55 cm²/(V·s),相应的沟道方阻为10.3 kΩ/sq。研制的栅漏间距2和16 μm的Ga₂O₃ MOSFET器件的比导通电阻分别为2.3和40.0 mΩ·cm²,对应的击穿电压分别达到458和2 324 V。为了进一步提升器件的击穿电压,采用p型NiO制备栅电极,研制的Ga₂O₃ JFET器件导通电阻显著增大,但击穿电压分别提升至755和3 000 V以上。计算了不同栅漏间距器件的功率优值(P-FOM),发现其随栅漏间距的增加先增大后减小,其中栅漏间距为8 μm的Ga₂O₃ MOSFET器件获得了最高的P-FOM,达到了192 MW/cm²,表明MOCVD外延技术在Ga₂O₃功率器件上具有重要的应用前景。

关键词: 氧化镓, MOCVD外延, 掺杂, 比导通电阻, 击穿电压, 功率优值

Abstract: In this paper, the Ga₂O₃ field-effect transistors were fabricated on the Ga₂O₃ epitaxial material grown by MOCVD, and their performances were studied. In order to reduce the on-resistances of the transistors, the epitaxial layer was optimally designed and the doping concentration was increased to above 1×10¹⁸ cm^-3. The electron concentration and field-effect mobility of the epitaxial layer extracted from the long channel transistor were 2×10¹⁸ cm^-3 and 55 cm²/(V·s), respectively, which result in a corresponding channel sheet resistance of 10.3 kΩ/sq. The specific on-resistances of the Ga₂O₃ MOSFETs with gate to drain spacings of 2 and 16 μm were 2.3 and 40.0 mΩ·cm², and the corresponding breakdown voltages were 458 and 2 324 V, respectively. In order to further improve the breakdown voltages of the transistors, the p-type NiO gates were employed. The on-resistances of the fabricated Ga₂O₃ JFETs were significantly increased, but the breakdown voltages were improved to 755 V and above 3 000 V, respectively. The power figure of merits (P-FOMs) of the transistors with different gate to drain spacings were calculated, and it was found that they increased first and then decreased with the increase of the gate to drain spacings. The Ga₂O₃ MOSFET with a gate to drain spacing of 8 μm achieved the highest P-FOM, which was 192 MW/cm², indicating the MOCVD epitaxial technology demonstrates an important application prospect for Ga₂O₃ power transistors.

Key words: gallium oxide, MOCVD epitaxial, doping, specific on-resistance, breakdown voltage, power figure of merit

中图分类号:

TN386.1

郁鑫鑫, 沈睿, 于含, 张钊, 赛青林, 陈端阳, 杨珍妮, 谯兵, 周立坤, 李忠辉, 董鑫, 张洪良, 齐红基, 陈堂胜. MOCVD生长的外延层掺杂氧化镓场效应晶体管[J]. 人工晶体学报, 2025, 54(2): 312-318.

YU Xinxin, SHEN Rui, YU Han, ZHANG Zhao, SAI Qinglin, CHEN Duanyang, YANG Zhenni, QIAO Bing, ZHOU Likun, LI Zhonghui, DONG Xin, ZHANG Hongliang, QI Hongji, CHEN Tangsheng. β-Ga₂O₃ Field-Effect Transistors with Doped Epitaxial Layer Grown by MOCVD[J]. Journal of Synthetic Crystals, 2025, 54(2): 312-318.

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MOCVD生长的外延层掺杂氧化镓场效应晶体管

β-Ga₂O₃ Field-Effect Transistors with Doped Epitaxial Layer Grown by MOCVD

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β-Ga₂O₃ Field-Effect Transistors with Doped Epitaxial Layer Grown by MOCVD