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JOURNAL OF SYNTHETIC CRYSTALS ›› 2020, Vol. 49 ›› Issue (8): 1555-1561.
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MA Yingjun;LIN Quan;YU Hongguo;MA Huichao;XU Xing;LI Wanpeng;XU Suocheng
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RSSOnline:2020-08-15
Published:2021-01-20
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MA Yingjun;LIN Quan;YU Hongguo;MA Huichao;XU Xing;LI Wanpeng;XU Suocheng. Concentration Distribution of Longitudinal Carriers in Silicon-doped HB-GaAs Single Crystals for Infrared LED[J]. Journal of Synthetic Crystals, 2020, 49(8): 1555-1561.
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