HVPE法同质外延氧化镓厚膜技术研究

doi:10.16553/j.cnki.issn1000-985x.2024.0251

人工晶体学报 ›› 2025, Vol. 54 ›› Issue (2): 227-232.DOI: 10.16553/j.cnki.issn1000-985x.2024.0251

HVPE法同质外延氧化镓厚膜技术研究

董增印^1,2, 王英民¹, 张嵩¹, 李贺¹, 孙科伟¹, 程红娟¹, 刘超²

1.中国电子科技集团公司第四十六研究所,天津 300220;
2.山东大学集成电路学院,济南 250100

收稿日期:2024-10-24 发布日期:2025-03-04
通信作者: 王英民,正高级工程师。E-mail:wymzll@126.com；王英民,博士,正高级工程师,中国电子科技集团公司首席科学家,山西省学术技术带头人,“三晋英才”领军人才,山西省新兴产业领军人才。主要研究方向为碳化硅、氧化镓、金刚石等宽禁带半导体材料。主持并参加了国家自然科学基金、“863”计划和山西省重大专项等国家、省部级科研项目20余项,获山西省、集团公司、国防系统等省部级科技进步奖5项。发表论文40余篇,申请/授权国家发明专利20余件。程红娟,正高级工程师。E-mail:xiemn08@126.com；程红娟,中国电子科技集团公司第四十六研究所新材料研发中心副主任,正高级工程师。《人工晶体学报》青年编委。主要从事硫化镉、氮化铝等新型半导体单晶材料研制工作。主持并参与国家863、国防973、国家重点研发计划、基础科研重大等各类科研项目20余项,先后获省部级奖项9次,发表科技论文10余篇,授权国家专利20余件。刘超,教授。E-mail:chao.liu@sdu.edu.cn；刘超,山东大学集成电路学院/晶体材料国家重点实验室教授、博士生导师、国家重点研发计划首席青年科学家、齐鲁青年学者、山东省高层次人才。主要研究领域是宽禁带半导体材料与器件。主持国家重点研发计划、国家自然科学基金等科研项目10余项。发表论文90余篇,申请/授权发明专利30余件。
作者简介:董增印(1990—),男,河北省人,博士研究生,工程师。E-mail:1430557445@qq.com；董增印,中国电子科技集团公司第四十六研究所新材料研发中心工程师,山东大学集成电路学院博士研究生。主要从事氧化镓、氮化铝等超宽禁带半导体材料外延研制工作,主持和参与国家稳定专项、国家重点研发计划等多项科研项目。

Homoepitaxial Growth of Gallium Oxide Thick Films by HVPE Method

DONG Zengyin^{1, 2}, WANG Yingmin¹, ZHANG Song¹, LI He¹, SUN Kewei¹, CHENG Hongjuan¹, LIU Chao²

1. The 46th Research Institute, China Electronics Technology Group Corporation, Tianjin 300220, China;
2. School of Integrated Circuits, Shandong University, Jinan 250100, China

Received:2024-10-24 Published:2025-03-04

摘要/Abstract

摘要： 卤化物气相外延(HVPE)法因生长速度快、掺杂可控等优势主要被用于生长β-Ga₂O₃同质外延片。本文采用垂直结构的HVPE设备进行β-Ga₂O₃厚膜的同质外延,探究了不同生长压力对β-Ga₂O₃的生长速度和外延质量的影响。研究发现,在生长相同厚度β-Ga₂O₃外延膜时,降低生长压力虽然使生长速度有所降低,但更容易获得生长条纹连贯的、高结晶质量的β-Ga₂O₃厚膜。分析了外延膜中非故意掺杂的氮杂质来源,排除了氮气分解的可能性,通过调控Ⅵ/Ⅲ比,即提升氧气分压,能够有效降低β-Ga₂O₃外延膜中的氮杂质浓度,从8×10¹⁶ cm^-3降低至1×10¹⁶ cm^-3。最终,采用优化后的外延工艺,制备出高质量的2英寸(1英寸=2.54 cm)HVPE β-Ga₂O₃外延片,膜厚和载流子浓度分别是15.8 μm和1.5×10¹⁶ cm^-3,两者的不均匀性分别是3.6%和7.6%。

关键词: 卤化物气相外延, β-Ga₂O₃, 同质外延, 生长压力, 氮杂质, Ⅵ/Ⅲ比

Abstract: Halide vapor phase epitaxy (HVPE) is mainly utilized to obtain β-Ga₂O₃ homoepitaxial wafers because of its advantages such as high growth rate and efficient impurity doping controllability. In this paper, the homoepitaxialβ-Ga₂O₃ thick films were grown by a vertical HVPE system. The effects of different growth pressures on the growth rate and epitaxial quality were investigated. It is found thatwhen growing epitaxial β-Ga₂O₃ films of the same thickness, although reducing the growth pressure slows down the growth rate, it can easily obtain high crystalline quality β-Ga₂O₃ thick films with unbroken microstep arrays. The source of unintentional nitrogen impurities in the epitaxial films was analyzed, and the possibility of nitrogen decomposition was ruled out. By adjusting the Ⅵ/Ⅲ ratio, specifically by increasing the oxygen partial pressure, the concentration of nitrogen impurities in β-Ga₂O₃ epitaxial films can be effectively reduced from 8×10¹⁶ cm^-3 to 1×10¹⁶ cm^-3. Finally, 2-inch high-quality HVPE β-Ga₂O₃ epitaxial wafer has been successfully achieved with optimized epitaxial growth parameters. The film thickness and carrier concentration are 15.8 μm and 1.5×10¹⁶ cm^-3, the inhomogeneity of which are 3.6% and 7.6%, respectively.

Key words: HVPE, β-Ga₂O₃, homoepitaxial, growth pressure, N impurity, Ⅵ/Ⅲ radio

中图分类号:

董增印, 王英民, 张嵩, 李贺, 孙科伟, 程红娟, 刘超. HVPE法同质外延氧化镓厚膜技术研究[J]. 人工晶体学报, 2025, 54(2): 227-232.

DONG Zengyin, WANG Yingmin, ZHANG Song, LI He, SUN Kewei, CHENG Hongjuan, LIU Chao. Homoepitaxial Growth of Gallium Oxide Thick Films by HVPE Method[J]. Journal of Synthetic Crystals, 2025, 54(2): 227-232.

参考文献

[1] AKITO K, KIMIYOSHI K, SHINYA W, et al. High-quality β-Ga₂O₃ single crystals grown by edge-defined film-fed growth[J]. Japanese Journal of Applied Physics, 2016, 55: 1202A2.
[2] STEPANOV S I, NIKOLAEV V I, BOUGROV V E, et al. Gallium oxide: properties and applications-a review[J]. Reviews on Applied Materials Science, 2016,44: 63-86.
[3] WASEEM A, REN Z, HUANG H C,et al. A review of recent progress in β-Ga₂O₃ epitaxial growth: effect of substrate orientation and precursors in metal-organic chemical vapor deposition[J]. Physica Status Solidi A, 2023, 220(8): 2200616.
[4] XIONG Z N, XIU X Q, LI Y W, et al. Growth of β-Ga₂O₃ films on sapphire by hydride vapor phase epitaxy[J]. Chinese Physics Letters, 2018, 35(5): 162-164.
[5] XU G W, WU F H, LIU Q, et al. Vertical β-Ga₂O₃ power electronics[J]. Journal of Semiconductors, 2023, 44(7): 070301.
[6] GALIA P, HSU C W, NATALIA A, et al. Development of β-Ga₂O₃ layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor[J]. Scientific Reports, 2020, 10: 22261.
[7] QIN Y, WANG Z, SASAKI K, et al. Recent progress of Ga₂O₃ power technology: large-area devices, packaging and applications[J]. Japanese Journal of Applied Physics, 2023, 62: SF0801.
[8] NOMURA K, GOTO K, TOGASHI R, et al. Thermodynamic study of beta-Ga₂O₃ growth by halide vapor phase epitaxy[J]. Journal of Crystal Growth, 2014, 405: 19-22.
[9] KONISHI K, GOTO K, TOGASHI R, et al. Comparison of O₂ and H₂O as oxygen source for homoepitaxial growth of beta-Ga₂O₃ layers by halide vapor phase epitaxy[J]. Journal of Crystal Growth, 2018, 492: 39-44.
[10] MURAKAMI H, NOMURA K, GOTO K, et al. Homoepitaxial growth of β-Ga₂O₃ layers by halide vapor phase epitaxy[J]. Applied Physics Express, 2015, 8(1): 015503.
[11] GOTO K, MURAKAMI H, KURAMATA A, et al. Effect of substrate orientation on homoepitaxial growth of β-Ga₂O₃ by halide vapor phase epitaxy[J]. Applied physics letters, 2022(10): 120.
[12] YUICHI O, TAKAYOSHI O. Homoepitaxial growth of (-102) β-Ga₂O₃ by halide vapor phase epitaxy[J]. Semiconductor Science and Technology, 2023, 38: 105003.
[13] GOTO K, KONISHI K, et al. Halide vapor phase epitaxy of Si doped β-Ga₂O₃ and its electrical properties[J]. Thin Solid Films, 2018, 66: 182-184.
[14] MARKO J T, ANDREW D K, JAIME A F, et al. High resistivity halide vapor phase homoepitaxial beta-Ga₂O₃ films co-doped by silicon and nitrogen[J]. Applied Physics Letters, 2018, 113: 192102.
[15] LEACH J, UDWARY K, RUMSEY J, et al. Halide vapor phase epitaxial growth of β-Ga₂O₃ and α-Ga₂O₃ films[J]. APL Mater, 2019, 7: 022504.
[16] SAYLEP S, KOHEI S, KATSUMI K, et al. Polycrystalline defects—origin of leakage current—in halide vapor phase epitaxial (001) β-Ga₂O₃ Schottky barrier diodes identified via ultrahigh sensitive emission microscopy and synchrotron X-ray topography[J]. Applied Physics Express, 2021, 14: 036502.
[17] SAYLEP S, KOHEI S, KATSUMI K, et al. Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga₂O₃ by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes[J]. Japanese Journal of Applied Physics, 2023, 62: SF1001.
[18] KASU M, OTSUBO Y, SDOEUNG S, et al. Microgrooves with low-index facets in halide vapor deposited (001) β-Ga₂O₃: origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron X-ray topography[J]. Applied Physics Express, 2024, 17: 071004.
[19] 汪正鹏, 张崇德, 孙新雨, 等. 切割角蓝宝石基氧化镓薄膜MOCVD外延及日盲紫外光电探测器制备[J]. 人工晶体学报, 2023, 52(6): 1007-1015.
WANG Z, ZHANG C, SUN X, et al. MOCVD epitaxy of β-Ga₂O₃ films on off-cut angled sapphire substrates and fabrication of solar-blind ultraviolet photodetector[J]. Journal of Synthetic Crystals, 2023, 52(6): 1007-1015.
[20] LI B, CHEN T, ZHANG L, et al. Enhancement-mode Ga₂O₃ FETs with an unintentionally doped (001) β-Ga₂O₃ channel layer grown by metal-organic chemical vapor deposition[J]. Japanese Journal of Applied Physics, 2024, 63: 070901.
[21] NING P, JONA G, JURGEN B, et al. Lattice vibrations and optical properties of α-Ga₂O₃ films grown by halide vapor phase epitaxy[J]. Semiconductor Science and Technology, 2020, 35: 095001.
[22] XU W, LI Y, LI B, et al. (310)-Oriented β-Ga₂O₃ grown on (0001) sapphire by halide vapor phase epitaxy: growth and structural characterizations[J]. CrystEngComm, 2023, 25: 6044-6049.
[23] FIKADU A, ZHANG Y, ANDREI O, et al. Low 10¹⁴ cm^-3 free carrier concentration in epitaxial β-Ga₂O₃ grown by MOCVD[J]. APL Materials, 2020, 8: 021110.
[24] LIN C, KENTARO E, SATOSHI M, et al. Uniformity improvement of thickness and net donor concentration in halide vapor phase epitaxial β-Ga₂O₃ wafers prepared on miscut angle substrates[J]. Japanese Journal Of Applied Physics, 2023, 62: SF1005.
[25] LARKIN D J, NEUDECK P G. Site-competition epitaxy for superior silicon carbide electronics[J]. Applied Physics Letters, 1994, 65(13): 1659-1661.

HVPE法同质外延氧化镓厚膜技术研究

Homoepitaxial Growth of Gallium Oxide Thick Films by HVPE Method

PDF (PC)

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

编辑推荐

Metrics

本文评价

[1]	查显弧, 万玉喜, 张道华. β相氧化镓p型导电研究进展[J]. 人工晶体学报, 2025, 54(2): 177-189.
[2]	王凯凯, 杜嵩, 徐豪, 龙浩. Ga₂O₃/NiO_x肖特基势垒二极管器件的性能优化研究[J]. 人工晶体学报, 2025, 54(2): 337-347.
[3]	杨晓龙, 唐慧丽, 张超逸, 孙鹏, 黄林, 陈龙, 徐军, 刘波. 光学浮区法生长Bi掺杂β-Ga₂O₃单晶及其光谱性质研究[J]. 人工晶体学报, 2025, 54(2): 202-211.
[4]	黄东阳, 黄浩天, 潘明艳, 徐子骞, 贾宁, 齐红基. 垂直布里奇曼法生长氧化镓单晶及其性能表征[J]. 人工晶体学报, 2025, 54(2): 190-196.
[5]	张子琦, 杨珍妮, 况思良, 魏盛龙, 徐文静, 陈端阳, 齐红基, 张洪良. MBE同质外延生长Sn掺杂β-Ga₂O₃(010)薄膜的电子输运性质研究[J]. 人工晶体学报, 2025, 54(2): 244-254.
[6]	杜桐, 付俊杰, 王紫石, 狄静, 陶春雷, 张赫之, 张琦, 胡锡兵, 梁红伟. β-Ga₂O₃基MSM型日盲紫外光电探测器高温电流输运机制的研究[J]. 人工晶体学报, 2025, 54(2): 319-328.
[7]	李悌涛, 卢耀平, 陈端阳, 齐红基, 张海忠. 氧化镓同质外延及二维“台阶流”生长研究[J]. 人工晶体学报, 2025, 54(2): 219-226.
[8]	钟琼丽, 王绪, 马奎, 杨发顺. Al掺杂对β-Ga₂O₃薄膜光学性质的影响研究[J]. 人工晶体学报, 2024, 53(8): 1352-1360.
[9]	贺小敏, 唐佩正, 刘若琪, 宋欣洋, 胡继超, 苏汉. AlN/β-Ga₂O₃HEMT频率特性仿真研究[J]. 人工晶体学报, 2024, 53(8): 1361-1368.
[10]	贺小敏, 唐佩正, 张宏伟, 张昭, 胡继超, 李群, 蒲红斌. AlN/β-Ga₂O₃HEMT直流特性仿真[J]. 人工晶体学报, 2024, 53(5): 766-772.
[11]	郭钰, 刘春俊, 张新河, 沈鹏远, 张博, 娄艳芳, 彭同华, 杨建. 碳化硅同质外延质量影响因素的分析与综述[J]. 人工晶体学报, 2024, 53(2): 210-217.
[12]	陈沛然, 焦腾, 陈威, 党新明, 刁肇悌, 李政达, 韩宇, 于含, 董鑫. p-Si/n-Ga₂O₃异质结制备与特性研究[J]. 人工晶体学报, 2024, 53(1): 73-81.
[13]	李信儒, 侯童, 马旭, 王佩, 李阳, 穆文祥, 贾志泰, 陶绪堂. 斜切角对β-Ga₂O₃(100)面衬底加工的影响研究[J]. 人工晶体学报, 2023, 52(9): 1570-1575.
[14]	高妍, 董海涛, 张小可, 冯文然. (Al_xGa_1-x)₂O₃结构、电子和光学性质的第一性原理研究[J]. 人工晶体学报, 2023, 52(9): 1674-1680.
[15]	李宗平, 程大猛. 金刚石线锯锯切β-Ga₂O₃晶体应力场分析[J]. 人工晶体学报, 2023, 52(8): 1378-1385.