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人工晶体学报 ›› 2026, Vol. 55 ›› Issue (4): 546-565.DOI: 10.16553/j.cnki.issn1000-985x.2025.0249
任国钊1(
), 陈良贤1(), 安康1,2, 刘宇晨1, 解承东1, 黄珂1, 胡耀彬1, 刘金龙1, 魏俊俊1, 李成明1()
E-mail Alert
RSS收稿日期:2025-12-10
出版日期:2026-04-20
发布日期:2026-05-19
通信作者:
陈良贤，博士。E-mail：chenliangxianbest@163.com；作者简介:任国钊（2001—），男，陕西省人，硕士研究生。E-mail：r1085861710@163.com
基金资助:
REN Guozhao1(), CHEN Liangxian1(), AN Kang1,2, LIU Yuchen1, XIE Chengdong1, HUANG Ke1, HU Yaobin1, LIU Jinlong1, WEI Junjun1, LI Chengming1()
Received:2025-12-10
Online:2026-04-20
Published:2026-05-19
摘要： 915 MHz微波等离子体化学气相沉积（MPCVD）是制备高性能、大尺寸金刚石膜的核心技术，对推动金刚石膜在终极半导体、高端热沉及光学窗口等领域的应用具有不可替代的作用。该技术凭借其低频率波长优势，在实现高功率、大面积沉积及无电极污染方面展现出巨大潜力，但同时也面临着大面积金刚石膜的均匀性控制难度大、等离子体模拟复杂，以及装备成本高昂等关键技术挑战。本文系统综述了915 MHz MPCVD技术的发展，着重对比分析了椭球式、环形天线式及狭缝耦合式等主流装置的设计原理和优劣势，及其相应的金刚石膜沉积工艺参数。最后指出，915 MHz MPCVD装置及金刚石膜沉积技术未来突破的关键在于面向半导体应用的大尺寸异质外延单晶金刚石制备、高功率微波装备的可靠性提升，以及融合电磁学、流体力学与化学反应热力学和动力学的跨尺度精准模拟。
中图分类号:
任国钊, 陈良贤, 安康, 刘宇晨, 解承东, 黄珂, 胡耀彬, 刘金龙, 魏俊俊, 李成明. 915 MHz微波等离子体化学气相沉积装置及其金刚石膜沉积研究进展[J]. 人工晶体学报, 2026, 55(4): 546-565.
REN Guozhao, CHEN Liangxian, AN Kang, LIU Yuchen, XIE Chengdong, HUANG Ke, HU Yaobin, LIU Jinlong, WEI Junjun, LI Chengming. Research Progress of 915 MHz MPCVD Devices and Its Diamond Film Deposition[J]. Journal of Synthetic Crystals, 2026, 55(4): 546-565.
图1 915 MHz MPCVD装置的四种电场分布模拟和腔室结构示意图。（a）椭球形式［23］；（b）环形天线上馈式［24］；（c）环形天线下馈式［17］；（d）、（e）iplas环形式［12］
Fig.1 Four simulation diagrams of electric field distribution and schematic diagram of chamber structure for the 915 MHz MPCVD device. （a） Elliptical shape［23］； （b） feedback type at the upper end of the ring antenna shape［24］； （c） feedback type at the lower end of the ring antenna shape［17］； （d）， （e） iplas ring shape［12］
Devices with different structure | Microwave coupling and transmission | Plasma uniformity | Continuous reliability | Characteristics of diamond production |
|---|---|---|---|---|
| Elliptical shape | The path is clear and relies on the geometric focus of the cavity. The bottleneck lies in the physical limit of the energy transmission medium （the quartz bell jar） | Spherical plasma can easily achieve high quality in a small area. However， when the area expands， the temperature and concentration gradient of active groups at the edge and the center will intensify， resulting in a decrease in uniformity | The heat load concentration point is at the quartz window | The quality of the diamond film is excellent |
| Ring antenna shape | Separate the energy coupling point from the plasma excitation zone. The fundamental advantage is that it decouples the contradiction between high-power microwave input and vacuum sealing/medium etching. The bottleneck depends on the sealing reliability of the mechanical structure | It is more conducive to radial expansion， but it also leads to more complex flow field and temperature field distributions. The large-area uniformity is highly dependent on the collaborative optimization of the cavity， base platform and airflow design | The heat load concentration point is in the sealing structure | The device has high power and a large preparation area |
| Slit coupling shape | By implementing distributed and multi-point coupling to optimize the efficiency and uniformity of energy injection， the essence lies in pursuing the limits of plasma parameters | The goal is to overcome the uniformity issue through high density and stability. However， thermal management and control of gas-phase chemical reactions become extremely complex under extremely high-power conditions | The point of concentrated heat load is the entire reactor chamber wall and the antenna | High sedimentation rate and good overall stability |
表1 不同结构的915 MHz MPCVD装置优势与缺点对比
Table 1 Comparison of advantages and disadvantages of 915 MHz MPCVD devices with different structures
Devices with different structure | Microwave coupling and transmission | Plasma uniformity | Continuous reliability | Characteristics of diamond production |
|---|---|---|---|---|
| Elliptical shape | The path is clear and relies on the geometric focus of the cavity. The bottleneck lies in the physical limit of the energy transmission medium （the quartz bell jar） | Spherical plasma can easily achieve high quality in a small area. However， when the area expands， the temperature and concentration gradient of active groups at the edge and the center will intensify， resulting in a decrease in uniformity | The heat load concentration point is at the quartz window | The quality of the diamond film is excellent |
| Ring antenna shape | Separate the energy coupling point from the plasma excitation zone. The fundamental advantage is that it decouples the contradiction between high-power microwave input and vacuum sealing/medium etching. The bottleneck depends on the sealing reliability of the mechanical structure | It is more conducive to radial expansion， but it also leads to more complex flow field and temperature field distributions. The large-area uniformity is highly dependent on the collaborative optimization of the cavity， base platform and airflow design | The heat load concentration point is in the sealing structure | The device has high power and a large preparation area |
| Slit coupling shape | By implementing distributed and multi-point coupling to optimize the efficiency and uniformity of energy injection， the essence lies in pursuing the limits of plasma parameters | The goal is to overcome the uniformity issue through high density and stability. However， thermal management and control of gas-phase chemical reactions become extremely complex under extremely high-power conditions | The point of concentrated heat load is the entire reactor chamber wall and the antenna | High sedimentation rate and good overall stability |
Comparison of TM0n mode under different devices | Ellipsoidal resonant cavity （dominated by TM0n mode） | Ring coupling shape resonant cavity （TM01/TM02 hybrid mode） |
|---|---|---|
Core design feature | Utilizing the geometric focusing of microwaves on an ellipsoidal surface， the energy is directly coupled to the reaction zone through the medium window （the quartz cover） | By using a surrounding metal antenna structure to radiate and couple microwaves， the plasma region is physically isolated from the microwave feeding point by the vacuum wall |
| Typical working mode | TM0n （n=1，2，3，…） has a simple mode （such as TM01/TM02）， and the electric field is symmetrically distributed along the axial direction | TM01 and TM02 and other multi-mode combinations are mixed. The cavity design allows several axial modes to coexist， thereby expanding the plasma volume |
Electric field distribution characteristic | The electric field resonantly intensifies between the two foci of the ellipsoid， with the energy highly concentrated in the smaller area near the lower focus， forming a strong excitation field | The electric field exhibits multiple maximum value regions radially （such as near the axis and the cavity wall）， with a more extensive distribution， which is conducive to large-scale expansion |
Plasma characteristic | Shape： Usually forms symmetrical spherical or ellipsoid plasma spheres Advantages： High energy density in the central region， good symmetry， conducive to obtaining high-quality diamond Challenge： The edge of the plasma ball has a large gradient， and when conducting large-scale deposition， the control of film thickness and quality uniformity becomes a core problem | Shape： can form ring-shaped， cap-shaped， or large-area disc-shaped plasmas Advantages： good radial expansion of electric field， naturally more suitable for uniform coverage of large substrates Challenges： the shape and position of the plasma are sensitive to tuning， and precise matching is required to maintain stability |
Power range and applicable scenario | Power range： Limited by quartz window etching and heat dissipation， traditional designs are typically <60 kW； modern improved models can have higher power Application scenarios： Most suitable for applications that aim for extreme crystal quality， such as epitaxial growth of single-crystal diamond at the electronic device level | Power range： the design of separating the antenna from the window avoids etching issues and can handle extremely high power （typically >75 kW， up to over 150 kW） Application scenarios： it is designed for high-power， large-area， and high-speed deposition， and is the mainstream industrial choice for large-sized polycrystalline diamond thick films and synthetic diamond production |
Technological difficulty | The energy density at the focal point under high power can easily exceed the thermal and corrosion resistance limits of the quartz window， thus becoming the main physical limitation for power increase | The long-term reliability of the high-vacuum sealing between the antenna structure and the cavity， as well as the complex tuning control of the multi-mode field and the plasma interaction |
表2 不同谐振模式应用于915 MHz MPCVD中的典型表现对比
Table 2 Comparison of typical performance of TM0mn mode in different 915 MHz MPCVD
Comparison of TM0n mode under different devices | Ellipsoidal resonant cavity （dominated by TM0n mode） | Ring coupling shape resonant cavity （TM01/TM02 hybrid mode） |
|---|---|---|
Core design feature | Utilizing the geometric focusing of microwaves on an ellipsoidal surface， the energy is directly coupled to the reaction zone through the medium window （the quartz cover） | By using a surrounding metal antenna structure to radiate and couple microwaves， the plasma region is physically isolated from the microwave feeding point by the vacuum wall |
| Typical working mode | TM0n （n=1，2，3，…） has a simple mode （such as TM01/TM02）， and the electric field is symmetrically distributed along the axial direction | TM01 and TM02 and other multi-mode combinations are mixed. The cavity design allows several axial modes to coexist， thereby expanding the plasma volume |
Electric field distribution characteristic | The electric field resonantly intensifies between the two foci of the ellipsoid， with the energy highly concentrated in the smaller area near the lower focus， forming a strong excitation field | The electric field exhibits multiple maximum value regions radially （such as near the axis and the cavity wall）， with a more extensive distribution， which is conducive to large-scale expansion |
Plasma characteristic | Shape： Usually forms symmetrical spherical or ellipsoid plasma spheres Advantages： High energy density in the central region， good symmetry， conducive to obtaining high-quality diamond Challenge： The edge of the plasma ball has a large gradient， and when conducting large-scale deposition， the control of film thickness and quality uniformity becomes a core problem | Shape： can form ring-shaped， cap-shaped， or large-area disc-shaped plasmas Advantages： good radial expansion of electric field， naturally more suitable for uniform coverage of large substrates Challenges： the shape and position of the plasma are sensitive to tuning， and precise matching is required to maintain stability |
Power range and applicable scenario | Power range： Limited by quartz window etching and heat dissipation， traditional designs are typically <60 kW； modern improved models can have higher power Application scenarios： Most suitable for applications that aim for extreme crystal quality， such as epitaxial growth of single-crystal diamond at the electronic device level | Power range： the design of separating the antenna from the window avoids etching issues and can handle extremely high power （typically >75 kW， up to over 150 kW） Application scenarios： it is designed for high-power， large-area， and high-speed deposition， and is the mainstream industrial choice for large-sized polycrystalline diamond thick films and synthetic diamond production |
Technological difficulty | The energy density at the focal point under high power can easily exceed the thermal and corrosion resistance limits of the quartz window， thus becoming the main physical limitation for power increase | The long-term reliability of the high-vacuum sealing between the antenna structure and the cavity， as well as the complex tuning control of the multi-mode field and the plasma interaction |
图2 求解耦合示意图
Fig.2 Decoupling schematic diagram
图3 微波电场模拟结果［17］。（a）微波电场；（b）还原电场；（c）电子密度；（d）气体温度分布；（e）不考虑等离子体激发的微波电场计算
Fig.3 Simulation results of microwave electric field［17］. （a） Microwave electric field； （b） reduction electric field； （c） electron density； （d） gas temperature distribution； （e） calculation of microwave electric field without considering plasma excitation
图4 德国Fraunhofer研究所的915 MHz椭球型反应装置系统（a）［23］及直径分别为2、3、4和6英寸的未打磨的金刚石圆盘（未经过抛光处理，仍附着在硅基板上）（b）［45］
Fig.4 915 MHz ellipsoidal reaction device system （a）［23］ raw diamond disks with 2， 3， 4， and 6 in. diameter （unpolished， still attached to the silicon substrate） （b）［45］
图5 使用915 MHz装置制备100 mm直径自支撑金刚石晶圆的成核面（a）和长大面（b）光学显微照片［42］
Fig.5 Nucleation side （a） and growth side （b） optical micrographs of a 100 mm diameter free-standing diamond wafer prepared using a 915 MHz system［42］
图6 DiamoTek 1800装置及沉积金刚石膜示意图［50］。（a）在ANL纳米材料中心的洁净室中运行的915 MHz MPCVD装置；150 mm直径Si晶圆（b）和200 mm直径 Si-CMOS晶圆（c）的照片，其中UNCD膜在400 ℃下生长
Fig.6 DiamoTek 1800 device and the schematic diagram of depositing diamond film［50］. （a） 915 MHz MPCVD system operating in the cleanroom at the ANL Center for Nanoscale Materials； photographs of a 150 mm diameter Si wafer （b） and a 200 mm diameter Si-CMOS wafer （c） with UNCD films grown at 400 ℃
图7 不同尺寸金刚石膜及其沉积各个区域的晶粒差异图［52］。沉积在51 mm（a）、（b），25 mm（c）、（d）和152 mm（e）直径衬底上的金刚石膜，显示中心（f）、中间（g）和边缘（h）直径152 mm金刚石膜的SEM照片
Fig.7 Photographs of differences in grain size of diamond films of different sizes and in various deposition areas［52］. The diamond films deposited on the substrates with diameters of 51 mm （a），（b）， 25 mm （c），（d） and 152 mm （e） show the SEM images of the 152 mm diameter diamond films at the center （f）， the middle （g） and the edge （h）
图8 河北普莱斯曼联合北京科技大学研制915 MHz MPCVD装置（a）及其沉积的3~5英寸金刚石膜（b）［17］
Fig.8 Hebei Priceman jointly developed the 915 MHz MPCVD equipment （a） with Beijing University of Science and Technology， and also produced the 3~5 inch diamond film （b） deposited by this equipment［17］
图9 915 MHz/TM021 MPCVD装置［40］
Fig.9 915 MHz/TM021 mode MPCVD system［40］
Team/ Organization | Device design features | Publicly available performance data | The stage ofcore technology development |
|---|---|---|---|
Gemany Fraunhofer IWs | Ellipsoidal resonant cavity type. Utilizes a unique ellipsoidal cavity for microwave focusing， and the plasma position remains stabie | It demonstrated the ability to fabri cate 6 inch diamond wafers. However， detailed process data such as specific growth rates and uniformity have not been fully disclosed in academic literature | Principle verification and high-end applications. Focusing on the principle-based preparation of high-quality， large-sized diamond films， providing a material foundation for high-end applications such as optics and windows |
| America ASTEX/Japan Seki | Ring antenna type （multi-mode non-cylindrical cavity）. It adopts an integrated design of ring quartz window and antenna/base.separating plasma from the window， and has high power carrying capacity | Using a 60 kW device， the research focused on the crystal orientation and morphology control techniques for 152 mm large-area diamond films | Process development and single crystal preparation. Focus on the research of deposition processes for industrialization， especially the preparation technology of large-sized single crystal diamond |
| Germany iplas | Slit coupling type. Utilizing a patented microwave coupling structure， it aims to achieve stable plasma under high pressure and high power density conditions | It is claimed that a diamond film with a diameter of 200 mm can be fabricated， The specific process parameters and quality data of the film are classified as trade secrets， and there are very few published academic research papers on this topic | Advanced process and equipment commercialization. Pursuing the technological limits under extremely high power and pressure. Commercialization of the equipment， but the technical details are kept confidential |
USTB（University of Science and Technology Beijing） | Ring antenna type. The independently developed cylindrical cavity and stepped ring antenna design takes into account both high power capacity and cavity sealing reliability | Using a 75 kW device， 3-5 inch crack-free self-supporting diamond films were successfully prepared. and the thickness uniformity （deviation） was approximately ±4% for the 3 -inch area and + 8% for the 5-inch area | Self-contained equipment and process integration. We have achieved a complete technological breakthrough covering the entire chain from reactor design. simulation. equipment construction to the high-quality production of diamond films |
HIT（Harbin Institute of Technology） | Ring antenna type （the specific design is not disclosed）. Utilizes a self-developed 915 MHz/75 kW MPCVD device | The 8-inch （approximately 200 mm） （111） oriented diamond epitaxial film was successfully prepared， and the influence of deposition temperature on the crystalline quality and uniformity was studied | Exploration of ultra-large size technology. Dedicated to promoting the application of diamond films to larger sizes （8 inches） and systematically studying the corresponding processes |
Hebei Presman/USTB | Ring antenna type （derivative design）. We adopted the developed 915 MHz/75 kW MPCVD equipment | A 127 mm （5 inches） diameter and 1 mm thick optical-grade diamond window material was prepared， with an optical transmittance close to the theoretical value | Engineering and productization. Focusing on the engineering production of optical-grade diamond window products， it has achieved the transformation from technology to product |
表3 国内外研究机构的915 MHz MPCVD装置研究现状
Table 3 Research status of 915 MHz MPCVD equipment by domestic and foreign research institutions
Team/ Organization | Device design features | Publicly available performance data | The stage ofcore technology development |
|---|---|---|---|
Gemany Fraunhofer IWs | Ellipsoidal resonant cavity type. Utilizes a unique ellipsoidal cavity for microwave focusing， and the plasma position remains stabie | It demonstrated the ability to fabri cate 6 inch diamond wafers. However， detailed process data such as specific growth rates and uniformity have not been fully disclosed in academic literature | Principle verification and high-end applications. Focusing on the principle-based preparation of high-quality， large-sized diamond films， providing a material foundation for high-end applications such as optics and windows |
| America ASTEX/Japan Seki | Ring antenna type （multi-mode non-cylindrical cavity）. It adopts an integrated design of ring quartz window and antenna/base.separating plasma from the window， and has high power carrying capacity | Using a 60 kW device， the research focused on the crystal orientation and morphology control techniques for 152 mm large-area diamond films | Process development and single crystal preparation. Focus on the research of deposition processes for industrialization， especially the preparation technology of large-sized single crystal diamond |
| Germany iplas | Slit coupling type. Utilizing a patented microwave coupling structure， it aims to achieve stable plasma under high pressure and high power density conditions | It is claimed that a diamond film with a diameter of 200 mm can be fabricated， The specific process parameters and quality data of the film are classified as trade secrets， and there are very few published academic research papers on this topic | Advanced process and equipment commercialization. Pursuing the technological limits under extremely high power and pressure. Commercialization of the equipment， but the technical details are kept confidential |
USTB（University of Science and Technology Beijing） | Ring antenna type. The independently developed cylindrical cavity and stepped ring antenna design takes into account both high power capacity and cavity sealing reliability | Using a 75 kW device， 3-5 inch crack-free self-supporting diamond films were successfully prepared. and the thickness uniformity （deviation） was approximately ±4% for the 3 -inch area and + 8% for the 5-inch area | Self-contained equipment and process integration. We have achieved a complete technological breakthrough covering the entire chain from reactor design. simulation. equipment construction to the high-quality production of diamond films |
HIT（Harbin Institute of Technology） | Ring antenna type （the specific design is not disclosed）. Utilizes a self-developed 915 MHz/75 kW MPCVD device | The 8-inch （approximately 200 mm） （111） oriented diamond epitaxial film was successfully prepared， and the influence of deposition temperature on the crystalline quality and uniformity was studied | Exploration of ultra-large size technology. Dedicated to promoting the application of diamond films to larger sizes （8 inches） and systematically studying the corresponding processes |
Hebei Presman/USTB | Ring antenna type （derivative design）. We adopted the developed 915 MHz/75 kW MPCVD equipment | A 127 mm （5 inches） diameter and 1 mm thick optical-grade diamond window material was prepared， with an optical transmittance close to the theoretical value | Engineering and productization. Focusing on the engineering production of optical-grade diamond window products， it has achieved the transformation from technology to product |
图10 直径150 mm的金刚石膜附着在硅衬底的光学照片（a），以及在915 MHz下生长金刚石膜中心（b）、中间（c）及边缘（d）位置的晶粒差异对比［62］
Fig.10 Optical photograph of a 150 mm diameter diamond film attached to a silicon substrate， and comparison of grain differences at the center （b）， middle （c） and edge （d） positions of the diamond film grown at 915 MHz［62］
图11 直径为200 mm的金刚石膜［73］
Fig.11 A 200 mm diameter diamond film［73］
图12 （a）采用循环氮掺杂工艺生长的典型 3 mm厚、5英寸多晶金刚石晶圆的照片； （b）金刚石晶圆的SEM照片，显示了金字塔形的表面形态（虚线所示）［76］
Fig.12 （a） Photograph of a typical 3 mm thick， 5 inch free-standing polycrystalline diamond wafer grown by the cyclic nitrogen doping process； （b） SEM image of the diamond wafer， showing a pyramidal surface morphology （indicated by dashed lines）［76］
图13 915 MHz下在Ir/YSZ/Si（001）衬底异质外延合成的未抛光单晶金刚石膜［77］
Fig.13 Unpolished single-crystal diamond film synthesized by heteroepitaxial growth on Ir/YSZ/Si（001） substrate at 915 MHz［77］
Process parameter | General influence laws of diamond films （SCD， MCD， NCD） | Challenges and new issues at 915 MHz | Corresponding process solutions |
|---|---|---|---|
| Microwave power | SCD/MCD：ower ↑， growth rate ↑， grain size ↑， but excessive power leads to defect ↑ and thermal stress ↑ NCD：sensitive to power， requires medium to low power to maintain nanocrystalline nucleation | The large volume of plasma results in low power density， and it is difficult to control the uniformity of the large-area temperature field. The edges are prone to becoming overly cold or overly hot | Active cooling/heating of the base： utilizes multi-zone temperature control Optimized coupling： achieves more uniform energy injection through tuning Power and pressure synergy： increases power density while maintaining the plasma volume |
| Pressure | SCD/MCD：pressure ↑， growth rate ↑， but the grains may become smaller and there may be amorphous carbon NCD：it is often necessary to apply a high pressure （greater than 10 kPa） to maintain a high nucleation density | High pressure will compress the plasma sphere， weakening the area advantage of 915 MHz； at the same time， it will change the transport paths of gaseous chemical species， affecting uniformity | Optimize the airflow field： design special gas nozzles to achieve laminar flow Select between “low pressure large area” or “high pressure small area” modes Dynamic pressure adjustment： adjust segmentally during the growth process |
| Temperature | SCD：strict temperature range （~800-1 000 ℃）， temperature determines the growth advantage of crystal planes MCD：wide range（700-1 100 ℃） NCD：lower level（<600 ℃） | The radial temperature gradient on the large substrate is significant， resulting in an enormous difference in membrane structure， stress， and growth rate between the edge and the center | Base material and structure design： use high thermal conductivity materials （such as molybdenum， copper） and optimize the heat sink Auxiliary heating： install auxiliary heaters at the edges or back of the base Plasma shaping： make the distribution of the plasma heat source more compatible with the substrate |
| Gas flow rate | CH4/H2 ratio： determines growth rate and film quality （parameter α） Added gas： N2 （promotes <111> texture， affects color centers）， O2/Ar （affects nucleation， etching amorphous carbon） Total flow rate： affects boundary layer thickness and growth rate | The transport pathways of gaseous chemical species are long， and the active groups are prone to undergo recombination or side reactions before reaching the substrate edge， which leads to an intensified edge effect （uneven composition and morphology） | Zone gas supply： different components or flow rates of air are provided for the center and the periphery High-speed sweeping flow： increase the total flow rate， thin the boundary layer， but balance uniformity and gas utilization efficiency Optimize nozzle design： make the airflow more in line with the shape of the plasma |
| Substrate and deposition platform | Substrate material： silicon （the most used）， molybdenum， iridium （used for hetero-epitaxial SCD） Base height/shape： affects plasma coupling， heat conduction， and airflow | The problem of thermal deformation of large-area substrates is prominent； the influence of the base geometry on the stability of large-area plasma is magnified； the distortion of the electric field/flow field at the edge | Base corner rounding / edge optimization： reduces edge electric field and heat flow concentration Substrate bonding technology： utilizes high-temperature solder or graphite foil to improve thermal contact Base elevation and rotation： dynamically adjusts position to optimize uniformity |
表4 在915 MHz下SCD、MCD和NCD的MPCVD工艺参数及其问题和解决方案
Table 4 SCD， MCD and NCD process parameters， as well as their problems and solutions at 915 MHz
Process parameter | General influence laws of diamond films （SCD， MCD， NCD） | Challenges and new issues at 915 MHz | Corresponding process solutions |
|---|---|---|---|
| Microwave power | SCD/MCD：ower ↑， growth rate ↑， grain size ↑， but excessive power leads to defect ↑ and thermal stress ↑ NCD：sensitive to power， requires medium to low power to maintain nanocrystalline nucleation | The large volume of plasma results in low power density， and it is difficult to control the uniformity of the large-area temperature field. The edges are prone to becoming overly cold or overly hot | Active cooling/heating of the base： utilizes multi-zone temperature control Optimized coupling： achieves more uniform energy injection through tuning Power and pressure synergy： increases power density while maintaining the plasma volume |
| Pressure | SCD/MCD：pressure ↑， growth rate ↑， but the grains may become smaller and there may be amorphous carbon NCD：it is often necessary to apply a high pressure （greater than 10 kPa） to maintain a high nucleation density | High pressure will compress the plasma sphere， weakening the area advantage of 915 MHz； at the same time， it will change the transport paths of gaseous chemical species， affecting uniformity | Optimize the airflow field： design special gas nozzles to achieve laminar flow Select between “low pressure large area” or “high pressure small area” modes Dynamic pressure adjustment： adjust segmentally during the growth process |
| Temperature | SCD：strict temperature range （~800-1 000 ℃）， temperature determines the growth advantage of crystal planes MCD：wide range（700-1 100 ℃） NCD：lower level（<600 ℃） | The radial temperature gradient on the large substrate is significant， resulting in an enormous difference in membrane structure， stress， and growth rate between the edge and the center | Base material and structure design： use high thermal conductivity materials （such as molybdenum， copper） and optimize the heat sink Auxiliary heating： install auxiliary heaters at the edges or back of the base Plasma shaping： make the distribution of the plasma heat source more compatible with the substrate |
| Gas flow rate | CH4/H2 ratio： determines growth rate and film quality （parameter α） Added gas： N2 （promotes <111> texture， affects color centers）， O2/Ar （affects nucleation， etching amorphous carbon） Total flow rate： affects boundary layer thickness and growth rate | The transport pathways of gaseous chemical species are long， and the active groups are prone to undergo recombination or side reactions before reaching the substrate edge， which leads to an intensified edge effect （uneven composition and morphology） | Zone gas supply： different components or flow rates of air are provided for the center and the periphery High-speed sweeping flow： increase the total flow rate， thin the boundary layer， but balance uniformity and gas utilization efficiency Optimize nozzle design： make the airflow more in line with the shape of the plasma |
| Substrate and deposition platform | Substrate material： silicon （the most used）， molybdenum， iridium （used for hetero-epitaxial SCD） Base height/shape： affects plasma coupling， heat conduction， and airflow | The problem of thermal deformation of large-area substrates is prominent； the influence of the base geometry on the stability of large-area plasma is magnified； the distortion of the electric field/flow field at the edge | Base corner rounding / edge optimization： reduces edge electric field and heat flow concentration Substrate bonding technology： utilizes high-temperature solder or graphite foil to improve thermal contact Base elevation and rotation： dynamically adjusts position to optimize uniformity |
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