物理气相传输法生长大直径碳化硅单晶多型夹杂缺陷控制研究

doi:10.16553/j.cnki.issn1000-985x.2025.0151

摘要/Abstract

摘要： 本文针对物理气相传输（PVT）法生长8英寸（1英寸=2.54 cm）N型4H-SiC晶体过程中的6H-SiC多型夹杂控制问题，通过实验与数值模拟相结合的方法进行了研究。首先采用射频加热系统开展实验得到6H-SiC多型夹杂的出现时刻和位置，并对晶体生长全过程数值模拟，跟踪晶体生长界面边缘的温度及其附近碳过饱和比随时间的变化趋势，构建6H-SiC多型夹杂形成的临界条件判据。再基于该判据，对典型大尺寸多温区电阻加热式PVT生长系统，建立工艺参数与6H-SiC多型夹杂缺陷的相关关系。研究结果发现，对于给定的生长系统，增大上/下加热器功率比和氩气环境压力，有利于抑制6H-SiC多型夹杂形成。

关键词: 4H-SiC; 物理气相传输法; 晶体生长; 6H-SiC多型夹杂; 缺陷控制; 数值模拟

Abstract: This study addresses the control of 6H-SiC polytype inclusions during the physical vapor transport （PVT） growth of 8-inch （1 inch=2.54 cm） N-type 4H-SiC crystals through experimental and numerical simulation approaches. Firstly， the emergence timing and locations of 6H-SiC polytype inclusions were determined via experimental observations （by RF heating system）. A numerical simulation of the entire crystal growth process was then conducted， tracking the evolution of temperature at the growth front edge and the carbon supersaturation ratio in its vicinity over time. This enabled the establishment of critical condition criteria for 6H-SiC polytype inclusion formation. Based on these criteria， the correlation between process parameters and 6H-SiC polytype inclusion defects was systematically investigated for a typical large-scale multi-zone resistive-heating PVT growth system. The findings reveal that for a given PVT system， increasing the upper/lower heater power ratio and the argon gas pressure contributes to suppressing the formation of 6H-SiC polytype inclusions.

Key words: 4H-SiC; PVT method; crystal growth; 6H-SiC polytype inclusion; defect control; numerical simulation

中图分类号:

O782

卢嘉铮, 胡润光, 郑丽丽, 张辉, 胡动力. 物理气相传输法生长大直径碳化硅单晶多型夹杂缺陷控制研究[J]. 人工晶体学报, 2025, 54(12): 2072-2082.

LU Jiazheng, HU Runguang, ZHENG Lili, ZHANG Hui, HU Dongli. Defect Control of Polytype Inclusion in Large-Diameter SiC Single Crystal Grown by PVT Method[J]. Journal of Synthetic Crystals, 2025, 54(12): 2072-2082.

图/表 13

图1 实验采用的射频加热式PVT系统示意图

Fig.1 Schematic diagram of the experimental RF heating PVT system

表1 实验加热功率、晶体生长时长、晶体平均生长速率与6H-SiC多型夹杂出现情况

Table 1 Heating power， crystal growth duration， average crystal growth rate and occurrence of 6H-SiC polytype inclusions of experiments

No.	Heating power	Growth duration/h	Average growth rate/（mm·h^-1）	6H-SiC polytype
1	P₀	60	0.145	None
2	101.4%P₀	110	0.158	None
3	102.8%P₀	110	0.177	Minor area
4	106.8%P₀	110	0.269	Extensive area

图2 实验获得的晶体表面形貌及其6H-SiC多型夹杂情况：（a）P0，无6H-SiC多型；（b）101.4% P0，无6H-SiC多型；（c）102.8% P0，红框处的浅表层存在6H-SiC多型；（d）106.8% P0，红框处存在大面积贯穿6H-SiC多型

Fig.2 Experimental morphology of crystal surfaces and 6H-SiC polytype inclusions：（a） P0， 6H-SiC polytype-free；（b） 101.4% P0， 6H-SiC polytype-free；（c） 102.8% P0， 6H-SiC polytype present in an minor area on the shallow surface layer （red box）；（d） 106.8% P0， 6H-SiC polytype inclusion developed throughout the crystal thickness in an extensive area （red circle）

图3 磁矢势分布（电磁场计算结果示例）

Fig.3 Distribution of magnetic vector potential （exemplary result of electromagnetic field computation）

图4 系统焦耳热分布情况。（a）系统整体和发热体的焦耳热分布；（b）发热体上焦耳热的轴向分布

Fig.4 Distribution of Joule heating system. （a） Distribution of Joule heating in the entire system and the susceptor；（b） axial distribution of Joule heating on the susceptor

图5 坩埚内部温度（左图）和气流速度（右图）在初、末时刻的分布情况，以及晶体生长界面形状。（a）P0/0 h；（b）101.4%P0/0 h；（c）102.8%P0/0 h；（d）106.8%P0/0 h；（e）P0/60 h；（f）101.4%P0/110 h；（g）102.8%P0/110 h；（h）106.8%P0/110 h

Fig.5 Distributions of temperature （left） and gas flow velocity （right） at initial and final stages in crucible， along with the shape of crystal growth interface. （a） P0/0 h；（b） 101.4%P0/0 h；（c） 102.8%P0/0 h；（d） 106.8%P0/0 h；（e） P0/60 h；（f） 101.4%P0/110 h；（g） 102.8%P0/110 h；（h） 106.8%P0/110 h

图6 晶体生长界面边缘温度T（a）及碳过饱和比值Seff（b）随时间的变化

Fig.6 Evolution of temperature T （a） and carbon supersaturation ratio Seff （b） at the crystal growth interface edge over time

图7 晶体生长界面边缘4H-SiC二维成核能（a）、6H-SiC二维成核能（b）及二者差值（c）随时间的变化趋势

Fig.7 Evolution of 4H-SiC 2D nucleation energy （a）， 6H-SiC 2D nucleation energy （b）， and the difference between them （c） over time at the crystal growth interface edge

图8 温度-碳过饱和比值（T-Seff）过程图。黑点无6H-SiC多型夹杂，红点有6H-SiC多型夹杂。红色虚线是4H-SiC向 6H-SiC转变的边界，等值线是6H-SiC与4H-SiC二维成核能的差值（单位：eV）

Fig.8 Temperature-carbon supersaturation ratio （T-Seff） process map. Black dots indicate no 6H-SiC polytype inclusion； red dots indicate presence of 6H-SiC polytype inclusion. The red dashed line is the boundary for the 4H-SiC to 6H-SiC transition； the contour lines represent the 2D nucleation energy difference between 6H-SiC and 4H-SiC （unit： eV）

图9 温度-晶体生长速率（T-Gcryst）过程图。黑点无6H-SiC多型夹杂，红点有6H-SiC多型夹杂。红色虚线是4H-SiC向 6H-SiC转变的边界，等值线是6H-SiC与4H-SiC二维成核能的差值（单位：eV）

Fig.9 Temperature-crystal growth rate （T-Gcryst） process map. Black dots indicate no 6H-SiC polytype inclusion； red dots indicate presence of 6H-SiC polytype inclusion. The red dashed line is the boundary for the 4H-SiC to 6H-SiC transition； the contour lines represent the 2D nucleation energy difference between 6H-SiC and 4H-SiC （units： eV）

图10 典型多温区电阻加热式PVT系统结构

Fig.10 Schematic structure of a typical multi-zone resistive-heating PVT system

图11 上/下加热器功率比与6H-SiC多型夹杂缺陷关系。（a）温度-碳过饱和比值；（b）温度-晶体生长速率过程图

Fig.11 Relationship between upper/lower heater power ratio and 6H-SiC polytype inclusion defects. （a） Temperature-carbon supersaturation ratio process map；（b） temperature-crystal growth rate process map

图12 氩气环境压力与6H-SiC多型夹杂缺陷关系。（a）温度-碳过饱和比值；（b）温度-晶体生长速率过程图

Fig.12 Relationship between Ar pressure and 6H-SiC polytype inclusion defects. （a） Temperature-carbon supersaturation ratio process map；（b） temperature-crystal growth rate process map

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