欢迎访问《人工晶体学报》官方网站,今天是 2025年7月15日 星期二 分享到:

人工晶体学报 ›› 2025, Vol. 54 ›› Issue (3): 452-461.DOI: 10.16553/j.cnki.issn1000-985x.2024.0305

• 薄膜外延 • 上一篇    下一篇

镓源温度对LPCVD氧化镓外延温度场影响的仿真研究

胡继超1, 赵启阳1, 杨志昊1, 杨莺1, 彭博2, 丁雄杰3, 刘薇3, 张红3   

  1. 1.西安理工大学自动化与信息工程学院,西安 710048;
    2.西安电子科技大学集成电路学部,西安 710071;
    3.广东天域半导体股份有限公司,东莞 523808
  • 收稿日期:2024-12-02 出版日期:2025-03-15 发布日期:2025-04-03
  • 作者简介:胡继超(1985—),男,河北省人,博士,副教授。E-mail:jchu@xaut.edu.cn; 胡继超,西安理工大学副教授,硕士生导师。主要从事宽禁带半导体材料(SiC、Ga2O3)外延生长及相关器件研究。主持了国家自然科学基金青年基金项目、面上项目,陕西省科技厅产学研协同创新计划项目,陕西省自然科学专项项目,西安市科技计划项目等。发表学术论文50余篇,其中以第一作者/通信作者身份发表SCI论文20余篇;以第一发明人授权国家发明专利8项。获陕西省教育厅科技进步二等奖1项。
  • 基金资助:
    国家自然科学基金(62474139,62104186,61904146);西安市科技计划(2023JH-GXRC-0122)

Simulation Study on the Effect of Gallium Source Temperature on the Temperature Field in LPCVD Gallium Oxide Epitaxy

HU Jichao1, ZHAO Qiyang1, YANG Zhihao1, YANG Ying1, PENG Bo2, DING Xiongjie3, LIU Wei3, ZHANG Hong3   

  1. 1. School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China;
    2. Faculty of Integrated Circuit, Xidian University, Xi'an 710071, China;
    3. Guangdong TYSiC Semiconductor Co. Ltd., Dongguan 523808, China
  • Received:2024-12-02 Online:2025-03-15 Published:2025-04-03

摘要: 低压化学气相沉积(LPCVD)卧式反应炉腔体内的温度高,结构复杂,通入反应气体时容易导致反应室内温度分布不均匀,影响制备薄膜的质量。为了制备出更高质量的薄膜,根据反应炉的设备数据建立反应腔体的物理模型;基于热传导、热对流、热辐射等模型,应用有限元仿真软件对反应过程中涉及的流场、热场、化学反应场和稀物质传递场等多物理场进行仿真模拟。通过改变镓源温度等工艺参数,模拟LPCVD反应腔体内的温度变化对β-Ga2O3薄膜沉积特性的影响。仿真结果表明,制备的薄膜均匀性随镓源温度的升高而降低,薄膜的沉积速率随温度的升高而增加,镓源温度为900~950 ℃时,可以得到质量较好的薄膜。通过优化工艺参数,LPCVD外延生长的β-Ga2O3薄膜的厚度和均匀度得到提升,可以制备出性能更加良好的Ga2O3器件。

关键词: 低压化学气相沉积, Ga2O3, 有限元仿真, 温场, 薄膜均匀性, 生长速率

Abstract: The high temperature and intricate structure within the low pressure chemical vapor deposition (LPCVD) horizontal reactor chamber can result in uneven temperature distribution when reaction gases are introduced, ultimately influencing the quality of the resulting thin films. To achieve films of superior quality, a physical model of the reaction chamber is developed based on the reactor's equipment data. Using models of heat conduction, heat convection, and heat radiation, finite element simulation software is employed to simulate the multiphysical fields involved in the reaction process, including the flow field, thermal field, chemical reaction field, and dilute substance transfer field. By varying process parameters, such as the gallium source temperature, the simulation assesses the effect of temperature fluctuations within the LPCVD reaction chamber on the deposition characteristics of β-Ga2O3 thin films. The simulation results reveal that the uniformity of the films diminishes as the gallium source temperature increases, whereas the deposition rate of the films increases with temperature. Optimal film quality is obtained when the gallium source temperature is maintained between 900 and 950 ℃. By optimizing process parameters, the thickness and uniformity of the β-Ga2O3 films grown by LPCVD epitaxy are enhanced, leading to the fabrication of Ga2O3 devices with improved performance.

Key words: low pressure chemical vapor deposition, Ga2O3, finite element simulation, temperature field, uniformity of thin film, growth rate

中图分类号: