基于氧化镓微纳米结构的探测器研究进展

doi:10.16553/j.cnki.issn1000-985x.2025.0001

摘要/Abstract

摘要： 氧化镓(Ga₂O₃)作为一种具有宽禁带(约4.9 eV)和特殊光电性能的半导体材料,近年来在紫外光探测器(UVPD)、光电传感器等领域得到了广泛关注。Ga₂O₃的微纳米结构,例如纳米线、纳米棒、纳米管和纳米片等一维或二维纳米结构,因具有优异的光电响应特性、快速的电子迁移率和高稳定性,成为提升探测器性能的关键。本文介绍了多种Ga₂O₃微纳米结构的合成方法,如水热法、电化学沉积法、气相沉积法等,分析了各种方法的优缺点,以及如何通过调节反应条件实现对Ga₂O₃微纳米结构形态和尺寸的精确控制。接着,探讨了这些微纳米结构在紫外探测器中的应用,尤其是在高灵敏度、高选择性和偏振光的光电探测器中表现出的潜力。

关键词: 氧化镓, 微纳米结构, 光探测器, 宽禁带半导体

Abstract: Gallium oxide (Ga₂O₃), a semiconductor material with a wide bandgap (approximately 4.9 eV) and unique optoelectronic properties, has attracted significant attention in recent years for applications in ultraviolet photodetectors (UVPD), photodetectors, and optoelectronic sensors. Ga₂O₃'s micro/nano structures, such as nanowires, nanorods, nanotubes, and nanosheets, exhibit excellent optoelectronic response characteristics, fast electron mobility, and high stability, making them crucial for enhancing the performance of detectors. This paper introduces various synthesis methods for Ga₂O₃ micro/nano structures, including hydrothermal, electrochemical deposition, and vapor deposition methods. The advantages and disadvantages of these techniques are analyzed, and how to achieve precise control over the morphology and size of Ga₂O₃ micro/nano structures by adjusting reaction conditions is discussed. Furthermore, the application of these micro/nano structures in ultraviolet photodetectors is explored, particularly their potential in high-sensitivity, high-selectivity, and polarization-sensitive optoelectronic detectors.

Key words: gallium oxide, micro/nano structure, photodetector, wide bandgap semiconductor

中图分类号:

陈俊宏, 胡鉴闻, 魏钟鸣. 基于氧化镓微纳米结构的探测器研究进展[J]. 人工晶体学报, 2025, 54(3): 491-510.

CHEN Junhong, HU Jianwen, WEI Zhongming. Research Progress of Gallium Oxide Micro/Nano Structure-Based Detectors[J]. Journal of Synthetic Crystals, 2025, 54(3): 491-510.

参考文献

[1] GELLER S. Crystal structure of β-Ga₂O₃[J]. The Journal of Chemical Physics, 1960, 33(3): 676-684.
[2] ONUMA T, SAITO S, SASAKI K, et al. Valence band ordering in β-Ga₂O₃ studied by polarized transmittance and reflectance spectroscopy[J]. Japanese Journal of Applied Physics, 2015, 54(11): 112601.
[3] MAREZIO M, REMEIKA J P. Bond lengths in the α-Ga₂O₃ structure and the high-pressure phase of Ga_2-xFe_xO₃[J]. The Journal of Chemical Physics, 1967, 46(5): 1862-1865.
[4] AKAIWA K, FUJITA S. Electrical conductive corundum-structured α-Ga₂O₃ thin films on sapphire with tin-doping grown by spray-assisted mist chemical vapor deposition[J]. Japanese Journal of Applied Physics, 2012, 51(7R): 070203.
[5] LIU Z F, YAMAZAKI T, SHEN Y B, et al. O₂ and CO sensing of Ga₂O₃ multiple nanowire gas sensors[J]. Sensors and Actuators B: Chemical, 2008, 129(2): 666-670.
[6] KAUR D, VASHISHTHA P, KHAN S A, et al. Phase dependent radiation hardness and performance analysis of amorphous and polycrystalline Ga₂O₃ solar-blind photodetector against swift heavy ion irradiation[J]. Journal of Applied Physics, 2020, 128(6): 065902.
[7] ZHONG M Z, WEI Z M, MENG X Q, et al. High-performance single crystalline UV photodetectors of β-Ga₂O₃[J]. Journal of Alloys and Compounds, 2015, 619: 572-575.
[8] ZHANG Y J, YAN J L, LI Q S, et al. Structural and optical properties of N-doped β-Ga₂O₃ films deposited by RF magnetron sputtering[J]. Physica B: Condensed Matter, 2011, 406(15/16): 3079-3082.
[9] JAMWAL N S, KIANI A. Gallium oxide nanostructures: a review of synthesis, properties and applications[J]. Nanomaterials, 2022, 12(12): 2061.
[10] CHOI J H, HAM M H, LEE W, et al. Fabrication and characterization of GaN/amorphous Ga₂O₃ nanocables through thermal oxidation[J]. Solid State Communications, 2007, 142(8): 437-440.
[11] LI M C, LU C, GAO L, et al. Ultrasensitive self-powered flexible crystalline β-Ga₂O₃-based photodetector obtained through lattice symmetry and band alignment engineering[J]. ACS Applied Materials & Interfaces, 2024, 16(32): 42406-42414.
[12] TANG R F, LI G Q, HU X, et al. Micro-nanoarchitectonics of Ga₂O₃/GaN core-shell rod arrays for high-performance broadband ultraviolet photodetection[J]. Crystals, 2023, 13(2): 366.
[13] FANG Y J, ARMIN A, MEREDITH P, et al. Accurate characterization of next-generation thin-film photodetectors[J]. Nature Photonics, 2019, 13(1): 1-4.
[14] GONG X, TONG M H, XIA Y J, et al. High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm[J]. Science, 2009, 325(5948): 1665-1667.
[15] KUMAR S, PRATIYUSH A S, DOLMANAN S B, et al. UV detector based on InAlN/GaN-on-Si HEMT stack with photo-to-dark current ratio > 10⁷[J]. Applied Physics Letters, 2017, 111(25): 251103.
[16] KHAN U, LUO Y T, TANG L, et al. Controlled vapor-solid deposition of millimeter-size single crystal 2D Bi₂O₂Se for high-performance phototransistors[J]. Advanced Functional Materials, 2019, 29(14): 1807979.
[17] BUSCEMA M, ISLAND J O, GROENENDIJK D J, et al. Photocurrent generation with two-dimensional van der Waals semiconductors[J]. Chemical Society Reviews, 2015, 44(11): 3691-3718.
[18] ZHANG Y H, LUO Z Z, HU F R, et al. Realization of vertical and lateral van der Waals heterojunctions using two-dimensional layered organic semiconductors[J]. Nano Research, 2017, 10(4): 1336-1344.
[19] PULFREY D L, KUEK J J, LESLIE M P, et al. High UV/solar rejection ratios in GaN/AlGaN/GaN p-i-n photodiodes[J]. IEEE Transactions on Electron Devices, 2001, 48(3): 486-489.
[20] WU W T, HUANG H, WANG Y L, et al. Structure engineering of Ga₂O₃ photodetectors: a review[J]. Journal of Physics D: Applied Physics, 2025, 58(6): 063003.
[21] RAZEGHI M, ROGALSKI A. Semiconductor ultraviolet detectors[J]. Journal of Applied Physics, 1996, 79(10): 7433-7473.
[22] HACKAM R, HARROP P. Electrical properties of nickel-low-doped n-type gallium arsenide Schottky-barrier diodes[J]. IEEE Transactions on Electron Devices, 1972, 19(12): 1231-1238.
[23] ELAHI E, AHMAD M, DAHSHAN A, et al. Contemporary innovations in two-dimensional transition metal dichalcogenide-based P-N junctions for optoelectronics[J]. Nanoscale, 2024, 16(1): 14-43.
[24] ZHOU J X, ZHANG N N, LIU J M, et al. The rise of 2D materials-based photoelectrochemical photodetectors: progress and prospect[J]. Advanced Optical Materials, 2024, 12(22): 2400706.
[25] YU S J, DING M F, MU W X, et al. β-Ga₂O₃ micro-flake FET SBPD with record detectivity of 3.87×10¹⁷ Jones for weak light detection[C]//2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). April 8-11, 2021. Chengdu, China. IEEE, 2021.
[26] LI X X, ZENG G, LI Y C, et al. High responsivity and flexible deep-UV phototransistor based on Ta-doped β-Ga₂O₃[J]. NPJ Flexible Electronics, 2022, 6: 47.
[27] COTTAM N D, DEWES B T, SHIFFA M, et al. Thin Ga₂O₃ layers by thermal oxidation of van der Waals GaSe nanostructures for ultraviolet photon sensing[J]. ACS Applied Nano Materials, 2024, 7(15): 17553-17560.
[28] DU J Y, XING J, GE C, et al. Highly sensitive and ultrafast deep UV photodetector based on a β-Ga₂O₃ nanowire network grown by CVD[J]. Journal of Physics D: Applied Physics, 2016, 49(42): 425105.
[29] LI B, DONG Z Y, XU W, et al. Synthesis of InAl-alloyed Ga₂O₃ nanowires for self-powered ultraviolet detectors by a CVD method[J]. RSC Advances, 2024, 14(32): 22847-22857.
[30] DONG H Y, MA S F, NIU Y P, et al. Fast response solar-blind ultraviolet photodetector based on the β-Ga₂O₃/p-Si heterojunction[J]. IEEE Electron Device Letters, 2024, 45(4): 554-557.
[31] LIU Y, WEI Y, SHA S L, et al. Flexible self-powered solar-blind Schottky photodetectors based on individual Ga₂O₃ microwire/MXene junctions[J]. CrystEngComm, 2023, 25(37): 5324-5333.
[32] ZHAO K, YANG J H, WANG P, et al. β-Ga₂O₃ nanoribbon with ultra-high solar-blind ultraviolet polarization ratio[J]. Advanced Materials, 2024, 36(46): 2406559.
[33] ALHALAILI B, VIDU R, SAIF ISLAM M. The growth of Ga₂O₃ nanowires on silicon for ultraviolet photodetector[J]. Sensors, 2019, 19(23): 5301.
[34] JIANG T C, QIU Y, TAO J, et al. Ga₂O₃@Al₂O₃ core-shell nanowires for high-performance solar-blind photodetectors[J]. ACS Applied Nano Materials, 2023, 6(11): 9849-9856.
[35] SHANGGUAN L, HE L B, DONG S P, et al. Fabrication of β-Ga₂O₃ nanotubes via sacrificial GaSb-nanowire templates[J]. Nanomaterials, 2023, 13(20): 2756.
[36] QU L H, JI J, LIU X, et al. Oxygen-vacancy-dependent high-performance α-Ga₂O₃ nanorods photoelectrochemical deep UV photodetectors[J]. Nanotechnology, 2023, 34(22): 225203.
[37] WANG X, DING K, HUANG L J, et al. Enhancing the performance of self-powered deep-ultraviolet photoelectrochemical photodetectors by constructing α-Ga₂O₃@a-Al₂O₃ core-shell nanorod arrays for Solar-Blind imaging[J]. Applied Surface Science, 2024, 648: 159022.
[38] HWANG W S, VERMA A, PEELAERS H, et al. High-voltage field effect transistors with wide-bandgap β-Ga₂O₃ nanomembranes[J]. Applied Physics Letters, 2014, 104(20): 203111.
[39] SCHMIDT C, RAHAMAN M, ZAHN D R T. Conversion of 2-dimensional GaSe to 2-dimensional β-Ga₂O₃ by thermal oxidation[J]. Nanotechnology, 2022, 33(4): 045702.
[40] LONG H R, XIONG T, HU J W, et al. Solar-blind ultraviolet anisotropic polarization detection by β-Ga₂O₃ based Schottky photodiodes[J]. IEEE Electron Device Letters, 2024, 45(7): 1153-1156.
[41] FILIPPO E, SICILIANO M, GENGA A, et al. Single crystalline β-Ga₂O₃ nanowires synthesized by thermal oxidation of GaSe layer[J]. Materials Research Bulletin, 2013, 48(5): 1741-1744.
[42] CHEN W, JIAO T, LI Z M, et al. Preparation of β-Ga₂O₃ nanostructured films by thermal oxidation of GaAs substrate[J]. Ceramics International, 2022, 48(4): 5698-5703.
[43] ZHANG L Y, LI Y W, XIU X Q, et al. Preparation of vertically aligned GaN@Ga₂O₃ core-shell heterostructured nanowire arrays and their photocatalytic activity for degradation of Rhodamine B[J]. Superlattices and Microstructures, 2020, 143: 106556.
[44] DING S, ZHANG L Y, LI Y W, et al. A selective etching route for large-scale fabrication of β-Ga₂O₃ micro-/ nanotube arrays[J]. Nanomaterials, 2021, 11(12): 3327.
[45] HE W Y, WU W X, LI Q X, et al. Facile fabrication of Ga₂O₃ nanorods for photoelectrochemical water splitting[J]. ChemNanoMat, 2020, 6(2): 208-211.
[46] LIU R R, LI L, WANG Q, et al. Photocatalytic conversion of CO₂ to CO with a p-n heterojunction based on core-shell β-Ga₂O₃@CoGa₂O₄ nanorods[J]. ACS Applied Nano Materials, 2024, 7(5): 5308-5316.