双生长腔互联MOCVD外延生长氧化镓异质结构及其紫外光电探测器件的研究

doi:10.16553/j.cnki.issn1000-985x.2024.0322

摘要/Abstract

摘要： 本文报道了利用氮化物-氧化物双生长腔互联金属有机化学气相沉积(MOCVD)系统外延生长氧化镓/氮化物薄膜异质结构并制备了高性能紫外光电探测器件。通过X射线衍射仪、原子力显微镜对不同衬底与不同缓冲层材料的薄膜结晶质量和表面形貌进行了表征;同时也利用光电测试系统对氧化镓平面和异质结型器件的紫外光电探测性能进行了研究。结果显示,AlN缓冲层的引入可以降低薄膜与衬底之间的晶格失配,有效提高了不同衬底外延氧化镓薄膜的结晶质量。利用双腔优势,分别在蓝宝石、p-Si(111)衬底上引入AlN缓冲层,获得具有(201)优选取向的高结晶质量的β-Ga₂O₃薄膜,显著提升了异质结日盲紫外光电探测器的器件性能。此外,还将β-Ga₂O₃与p型GaN结合制备了pn异质结构,研究了不同氧化层厚度对异质结光电探测性能的影响,最终制备了氧化镓基高性能紫外光电探测器件。

关键词: 氧化镓, 宽禁带半导体, 金属有机化学气相沉积, 外延生长, 异质结, 紫外光电探测

Abstract: This paper reports the epitaxial growth of Ga₂O₃/nitride thin film heterostructures using a nitrogen-oxide double chamber interconnected metal organic chemical vapor deposition (MOCVD) technique, achieving high-performance ultraviolet photodetector devices. The crystallization quality and surface morphology of the thin films were characterized using X-ray diffraction and atomic force microscopy for different substrates and buffer layer materials. Additionally, the ultraviolet photodetection performance of both planar and heterojunction Ga₂O₃ devices was studied using a photoelectric testing system. The results show that the introduction of an AlN buffer layer can reduce the lattice mismatch between the thin film and the substrate, effectively improving the crystallization quality of the epitaxial Ga₂O₃ thin films on different substrates. Utilizing the advantages of the double chamber, an AlN buffer layer on sapphire and p-Si (111) substrates was introduced respectively, resulting in β-Ga₂O₃ thin films with a preferred orientation of (201) and high structural quality, significantly enhancing the device performance of heterojunction blind ultraviolet photodetectors. Furthermore, we combined β-Ga₂O₃ with p-type GaN to fabricate a pn heterostructure and investigated the effect of different oxide layer thicknesses on the photodetection performance of the heterojunction. Ultimately, high-performance ultraviolet photodetector devices based on Ga₂O₃ were achieved.

Key words: β-Ga₂O₃, wide bandgap semiconductor, MOCVD, epitaxial growth, heterojunction, ultraviolet photoelectric detection

中图分类号:

王月飞, 高冲, 吴哲, 李炳生, 刘益春. 双生长腔互联MOCVD外延生长氧化镓异质结构及其紫外光电探测器件的研究[J]. 人工晶体学报, 2025, 54(3): 426-437.

WANG Yuefei, GAO Chong, WU Zhe, LI Bingsheng, LIU Yichun. Study on the Epitaxial Growth of Gallium Oxide Heterostructure and UV Photodetector by Double Chamber Interconnected MOCVD[J]. Journal of Synthetic Crystals, 2025, 54(3): 426-437.

参考文献

[1] XIE C, LU X T, TONG X W, et al. Recent progress in solar-blind deep-ultraviolet photodetectors based on inorganic ultrawide bandgap semiconductors[J]. Advanced Functional Materials, 2019, 29(9): 1806006.
[2] PEARTON S J, YANG J C, CARY P H, et al. A review of Ga₂O₃ materials, processing, and devices[J]. Applied Physics Reviews, 2018, 5(1): 011301.
[3] LEEDY K D, CHABAK K D, VASILYEV V, et al. Highly conductive homoepitaxial Si-doped Ga₂O₃ films on (010) β-Ga₂O₃ by pulsed laser deposition[J]. Applied Physics Letters, 2017, 111(1): 012103.
[4] OANH VU T K, LEE D U, KIM E K. The effect of oxygen partial pressure on band gap modulation of Ga₂O₃ grown by pulsed laser deposition[J]. Journal of Alloys and Compounds, 2019, 806: 874-880.
[5] SASAKI K, HIGASHIWAKI M, KURAMATA A, et al. MBE grown Ga₂O₃ and its power device applications[J]. Journal of Crystal Growth, 2013, 378: 591-595.
[6] PRATIYUSH A S, KRISHNAMOORTHY S, KUMAR S, et al. Demonstration of zero bias responsivity in MBE grown β-Ga₂O₃ lateral deep-UV photodetector[J]. Japanese Journal of Applied Physics, 2018, 57(6): 060313.
[7] ALEMA F, HERTOG B, MUKHOPADHYAY P, et al. Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga₂O₃ thin film[J]. APL Materials, 2019, 7(2): 022527.
[8] ANHAR UDDIN BHUIYAN A F M, FENG Z X, JOHNSON J M, et al. MOCVD epitaxy of β-(Al_xGa_1-x)₂O₃ thin films on (010) Ga₂O₃ substrates and N-type doping[J]. Applied Physics Letters, 2019, 115(12): 120602.
[9] YAO Y, OKUR S, LYLE L A M, et al. Growth and characterization of α-, β-, and ε-phases of Ga₂O₃ using MOCVD and HVPE techniques[J]. Materials Research Letters, 2018, 6(5): 268-275.
[10] NIKOLAEV V I, PECHNIKOV A I, NIKOLAEV V V, et al. HVPE growth of α- and ε-Ga₂O₃ on patterned sapphire substrates[J]. Journal of Physics: Conference Series, 2019, 1400(5): 055049.
[11] ALEMA F, HERTOG B, OSINSKY A, et al. Fast growth rate of epitaxial β-Ga₂O₃ by close coupled showerhead MOCVD[J]. Journal of Crystal Growth, 2017, 475: 77-82.
[12] FENG Z X, ANHAR UDDIN BHUIYAN A F M, KARIM M R, et al. MOCVD homoepitaxy of Si-doped (010) β-Ga₂O₃ thin films with superior transport properties[J]. Applied Physics Letters, 2019, 114(25): 250601.
[13] ZHANG Y W, ALEMA F, MAUZE A, et al. MOCVD grown epitaxial β-Ga₂O₃ thin film with an electron mobility of 176 cm²/V s at room temperature[J]. APL Materials, 2018, 7(2): 022506.
[14] ALEMA F, ZHANG Y W, OSINSKY A, et al. Low 114 cm^-3 free carrier concentration in epitaxial β-Ga₂O₃ grown by MOCVD[J]. APL Materials, 2020, 8(2): 021110.
[15] SERYOGIN G, ALEMA F, VALENTE N, et al. MOCVD growth of high purity Ga₂O₃ epitaxial films using trimethylgallium precursor[J]. Applied Physics Letters, 2020, 117(26): 262101.
[16] SINGH PRATIYUSH A, KRISHNAMOORTHY S, VISHNU SOLANKE S, et al. High responsivity in molecular beam epitaxy grown β-Ga₂O₃ metal semiconductor metal solar blind deep-UV photodetector[J]. Applied Physics Letters, 2017, 110(22): 221107.
[17] XU Y, AN Z Y, ZHANG L X, et al. Solar blind deep ultraviolet β-Ga₂O₃ photodetectors grown on sapphire by the mist-CVD method[J]. Optical Materials Express, 2018, 8(9): 2941.
[18] FU S H, WANG Y F, HAN Y R, et al. β-Ga₂O₃-based solar-blind photodetector with ultrahigh responsivity via optimizing interdigital electrode parameters[J]. IEEE Electron Device Letters, 2022, 43(9): 1511-1514.
[19] WU C, WU F M, HU H Z, et al. Review of self-powered solar-blind photodetectors based on Ga₂O₃[J]. Materials Today Physics, 2022, 28: 100883.
[20] CHI P F, LIN F W, LEE M L, et al. High-responsivity solar-blind photodetectors formed by Ga₂O₃/p-GaN bipolar heterojunctions[J]. ACS Photonics, 2022, 9(3): 1002-1007.
[21] MA Y J, CHEN T W, ZHANG X D, et al. High-photoresponsivity self-powered a-, ε-, and β-Ga₂O₃/p-GaN heterojunction UV photodetectors with an In situ GaON layer by MOCVD[J]. ACS Applied Materials & Interfaces, 2022, 14(30): 35194-35204.
[22] CHEN W C, XU X Y, LI M H, et al. A fast self-powered solar-blind ultraviolet photodetector realized by Ga₂O₃/GaN PIN heterojunction with a fully depleted active region[J]. Advanced Optical Materials, 2023, 11(8): 2202847.
[23] WANG Y C, WU C, GUO D Y, et al. All-oxide NiO/Ga₂O₃ p-n junction for self-powered UV photodetector[J]. ACS Applied Electronic Materials, 2020, 2(7): 2032-2038.
[24] LIU Y, ZHOU Y J, PENG W B, et al. Enhanced ultraviolet electroluminescence performance from p-NiO/n-GaN heterojunctions by using i-Ga₂O₃ as electron blocking layer[J]. Optik, 2022, 262: 169362.
[25] LI J S, XIA X Y, CHIANG C C, et al. Deposition of sputtered NiO as a p-type layer for heterojunction diodes with Ga₂O₃[J]. Journal of Vacuum Science Technology A: Vacuum Surfaces and Films, 2023, 41(1): 013405.
[26] WANG H, XIANG G J, ZHOU Y J, et al. Excellent electroluminescence and electrical characteristics from p-CuO/i-Ga₂O₃/n-GaN light-emitting diode prepared by magnetron sputtering[J]. Journal of Luminescence, 2022, 243: 118621.
[27] CHEN Y C, LU Y J, LIN C N, et al. Self-powered diamond/β-Ga₂O₃ photodetectors for solar-blind imaging[J]. Journal of Materials Chemistry C, 2018, 6(21): 5727-5732.
[28] WU Z, WANG Y F, SONG Y H, et al. High-performance solar-blind photodetector of β-Ga₂O₃ grown on sapphire with embedding an ultra-thin AlN buffer layer[J]. Journal of Alloys and Compounds, 2024, 1005: 176156.
[29] GAO C, WANG Y F, FU S H, et al. Solar blind avalanche photodetector based on a n-β-Ga₂O₃/n-Si heterojunction via an introduction of AlN buffer layer for interface lattice and band Engineering[J]. Materials Today Physics, 2024, 45: 101474.
[30] GAO C, WANG Y F, FU S H, et al. High-performance solar-blind ultraviolet photodetectors based on β-Ga₂O₃ thin films grown on p-Si(111) substrates with improved material quality via an AlN buffer layer introduced by metal-organic chemical vapor deposition[J]. ACS Applied Materials & Interfaces, 2023, 15(32): 38612-38622.
[31] SONG D Y, WU Z, CUI W Z, et al. Laser-MBE improving growth of β-Ga₂O₃ films by introducing a homo-amorphous nucleation seed layer for solar-blind deep UV photodetector applications[J]. Materials Science and Engineering: B, 2025, 313: 117890.
[32] HAN Y R, WANG Y F, FU S H, et al. Ultrahigh detectivity broad spectrum UV photodetector with rapid response speed based on p-β Ga₂ O₃/n-GaN heterojunction fabricated by a reversed substitution doping method[J]. Small, 2023, 19(16): 2206664.
[33] CAO Q, HE L N, XIAO H D, et al. β-Ga₂O₃ epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD[J]. Materials Science in Semiconductor Processing, 2018, 77: 58-63.
[34] LI Y F, ZHANG Y C, ZHANG J C, et al. Investigation on high quality ultra-wide band gap β-Ga₂O₃/AlN heterostructure grown by metal organic chemical vapor deposition[J]. Semiconductor Science and Technology, 2022, 37(9): 095004.
[35] SUN H D, TORRES CASTANEDO C G, LIU K K, et al. Valence and conduction band offsets of β-Ga₂O₃/AlN heterojunction[J]. Applied Physics Letters, 2017, 111(16): 162105.
[36] WANG Z W, HAN K J, HUANG H, et al. Interface-engineering induced swift and controllable solar-blind photoresponse in Ga₂O₃/SiC heterojunction based on unconventional rectification characteristics[J]. Advanced Functional Materials, 2024, 34(33): 2400498.
[37] XIE X H, ZHANG Z Z, SHAN C X, et al. Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction[J]. Applied Physics Letters, 2012, 101(8): 081104.